skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor

Abstract

The electronic spin and valley transport properties of a monolayer MoS{sub 2} are investigated using the non-equilibrium Green's function formalism combined with density functional theory. Due to the presence of strong Rashba spin orbit interaction (RSOI), the electronic valence bands of monolayer MoS{sub 2} are split into spin up and spin down Zeeman-like texture near the two inequivalent vertices K and K′ of the first Brillouin zone. When the gate voltage is applied in the scattering region, an additional strong RSOI is induced which generates an effective magnetic field. As a result, electron spin precession occurs along the effective magnetic field, which is controlled by the gate voltage. This, in turn, causes the oscillation of conductance as a function of the magnitude of the gate voltage and the length of the gate region. This current modulation due to the spin precession shows the essential feature of the long sought Datta-Das field effect transistor (FET). From our results, the oscillation periods for the gate voltage and gate length are found to be approximately 2.2 V and 20.03a{sub B} (a{sub B} is Bohr radius), respectively. These observations can be understood by a simple spin precessing model and indicate that the electron behaviors inmore » monolayer MoS{sub 2} FET are both spin and valley related and can easily be controlled by the gate.« less

Authors:
; ; ;  [1];  [2];  [3]
  1. School of Physics Science and Technology, and Institute of Computational Condensed Matter Physics, Shenzhen University, Shenzhen 518060 (China)
  2. School of Physics and Optoelectronics, South China University of Technology, Guangzhou (China)
  3. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)
Publication Date:
OSTI Identifier:
22399258
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; APPROXIMATIONS; BRILLOUIN ZONES; DENSITY FUNCTIONAL METHOD; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; FIELD EFFECT TRANSISTORS; L-S COUPLING; MAGNETIC FIELDS; MODULATION; MOLYBDENUM SULFIDES; OSCILLATIONS; PRECESSION; SCATTERING; SPIN; TEXTURE; VALENCE; ZEEMAN EFFECT

Citation Formats

Zhou, Y. F., Wang, B., Yu, Y. J., Wei, Y. D., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk, Xian, H. M., and Wang, J., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk. Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor. United States: N. p., 2015. Web. doi:10.1063/1.4914954.
Zhou, Y. F., Wang, B., Yu, Y. J., Wei, Y. D., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk, Xian, H. M., & Wang, J., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk. Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor. United States. doi:10.1063/1.4914954.
Zhou, Y. F., Wang, B., Yu, Y. J., Wei, Y. D., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk, Xian, H. M., and Wang, J., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk. Sat . "Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor". United States. doi:10.1063/1.4914954.
@article{osti_22399258,
title = {Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor},
author = {Zhou, Y. F. and Wang, B. and Yu, Y. J. and Wei, Y. D., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk and Xian, H. M. and Wang, J., E-mail: ywei@szu.edu.cn, E-mail: jianwang@hku.hk},
abstractNote = {The electronic spin and valley transport properties of a monolayer MoS{sub 2} are investigated using the non-equilibrium Green's function formalism combined with density functional theory. Due to the presence of strong Rashba spin orbit interaction (RSOI), the electronic valence bands of monolayer MoS{sub 2} are split into spin up and spin down Zeeman-like texture near the two inequivalent vertices K and K′ of the first Brillouin zone. When the gate voltage is applied in the scattering region, an additional strong RSOI is induced which generates an effective magnetic field. As a result, electron spin precession occurs along the effective magnetic field, which is controlled by the gate voltage. This, in turn, causes the oscillation of conductance as a function of the magnitude of the gate voltage and the length of the gate region. This current modulation due to the spin precession shows the essential feature of the long sought Datta-Das field effect transistor (FET). From our results, the oscillation periods for the gate voltage and gate length are found to be approximately 2.2 V and 20.03a{sub B} (a{sub B} is Bohr radius), respectively. These observations can be understood by a simple spin precessing model and indicate that the electron behaviors in monolayer MoS{sub 2} FET are both spin and valley related and can easily be controlled by the gate.},
doi = {10.1063/1.4914954},
journal = {Journal of Applied Physics},
number = 10,
volume = 117,
place = {United States},
year = {Sat Mar 14 00:00:00 EDT 2015},
month = {Sat Mar 14 00:00:00 EDT 2015}
}