Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor

Journal Article · Sat Mar 14 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4914954· OSTI ID:22399258

Zhou, Y. F.; Wang, B.; Yu, Y. J.; Xian, H. M. ^[1]

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1. School of Physics and Optoelectronics, South China University of Technology, Guangzhou (China)

The electronic spin and valley transport properties of a monolayer MoS{sub 2} are investigated using the non-equilibrium Green's function formalism combined with density functional theory. Due to the presence of strong Rashba spin orbit interaction (RSOI), the electronic valence bands of monolayer MoS{sub 2} are split into spin up and spin down Zeeman-like texture near the two inequivalent vertices K and K′ of the first Brillouin zone. When the gate voltage is applied in the scattering region, an additional strong RSOI is induced which generates an effective magnetic field. As a result, electron spin precession occurs along the effective magnetic field, which is controlled by the gate voltage. This, in turn, causes the oscillation of conductance as a function of the magnitude of the gate voltage and the length of the gate region. This current modulation due to the spin precession shows the essential feature of the long sought Datta-Das field effect transistor (FET). From our results, the oscillation periods for the gate voltage and gate length are found to be approximately 2.2 V and 20.03a{sub B} (a{sub B} is Bohr radius), respectively. These observations can be understood by a simple spin precessing model and indicate that the electron behaviors in monolayer MoS{sub 2} FET are both spin and valley related and can easily be controlled by the gate.

• OSTI ID: 22399258
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
APPROXIMATIONS
BRILLOUIN ZONES
DENSITY FUNCTIONAL METHOD
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONS
FIELD EFFECT TRANSISTORS
L-S COUPLING
MAGNETIC FIELDS
MODULATION
MOLYBDENUM SULFIDES
OSCILLATIONS
PRECESSION
SCATTERING
SPIN
TEXTURE
VALENCE
ZEEMAN EFFECT