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Title: Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks

Abstract

In this paper, the degradation characteristics of MOS (Metal-Oxide-Semiconductor) stacks with Al{sub 2}O{sub 3}/AlON or Al{sub 2}O{sub 3} only as dielectric layers on InGaAs were studied. The dielectric nitrides are proposed as possible passivation layers to prevent InGaAs oxidation. At negative bias, it has been found out that the main contribution to the overall degradation of the gate oxide is dominated by the generation of positive charge in the gate oxide. This effect is pronounced in MOS stacks with Al{sub 2}O{sub 3}/AlON as dielectric, where we think the positive charge is mainly generated in the AlON interlayer. At positive bias, the degradation is dominated by buildup of negative charge due to electron trapping in pre-existing or stress-induced traps. For stress biases where the leakage currents are low, the changes in the electrical characteristics are dominated by electron-trapping into traps located in energy levels in the upper part of the semiconductor gap. For stress biases with higher leakage current levels, the electron trapping occurs in stress-induced traps increasing the shift of V{sub FB} towards positive bias. The overall results clearly show that the improvement of the high-k dielectric/InGaAs interface by introducing N into the Al-oxide does not necessarily mean an increasemore » in the reliability of the MOS stack.« less

Authors:
; ;  [1]
  1. Department of Materials Science and Engineering, Technion – Israel Institute of Technology, 32000 Haifa (Israel)
Publication Date:
OSTI Identifier:
22399253
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; ELECTRONS; ENERGY LEVELS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; NITRIDES; OXIDATION; PASSIVATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; STRESSES; TRAPPING

Citation Formats

Palumbo, F., E-mail: felix.palumbo@conicet.gov.ar, Krylov, I., and Eizenberg, M.. Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks. United States: N. p., 2015. Web. doi:10.1063/1.4914492.
Palumbo, F., E-mail: felix.palumbo@conicet.gov.ar, Krylov, I., & Eizenberg, M.. Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks. United States. doi:10.1063/1.4914492.
Palumbo, F., E-mail: felix.palumbo@conicet.gov.ar, Krylov, I., and Eizenberg, M.. Sat . "Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks". United States. doi:10.1063/1.4914492.
@article{osti_22399253,
title = {Comparison of the degradation characteristics of AlON/InGaAs and Al{sub 2}O{sub 3}/InGaAs stacks},
author = {Palumbo, F., E-mail: felix.palumbo@conicet.gov.ar and Krylov, I. and Eizenberg, M.},
abstractNote = {In this paper, the degradation characteristics of MOS (Metal-Oxide-Semiconductor) stacks with Al{sub 2}O{sub 3}/AlON or Al{sub 2}O{sub 3} only as dielectric layers on InGaAs were studied. The dielectric nitrides are proposed as possible passivation layers to prevent InGaAs oxidation. At negative bias, it has been found out that the main contribution to the overall degradation of the gate oxide is dominated by the generation of positive charge in the gate oxide. This effect is pronounced in MOS stacks with Al{sub 2}O{sub 3}/AlON as dielectric, where we think the positive charge is mainly generated in the AlON interlayer. At positive bias, the degradation is dominated by buildup of negative charge due to electron trapping in pre-existing or stress-induced traps. For stress biases where the leakage currents are low, the changes in the electrical characteristics are dominated by electron-trapping into traps located in energy levels in the upper part of the semiconductor gap. For stress biases with higher leakage current levels, the electron trapping occurs in stress-induced traps increasing the shift of V{sub FB} towards positive bias. The overall results clearly show that the improvement of the high-k dielectric/InGaAs interface by introducing N into the Al-oxide does not necessarily mean an increase in the reliability of the MOS stack.},
doi = {10.1063/1.4914492},
journal = {Journal of Applied Physics},
number = 10,
volume = 117,
place = {United States},
year = {Sat Mar 14 00:00:00 EDT 2015},
month = {Sat Mar 14 00:00:00 EDT 2015}
}