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Title: Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

Abstract

By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.

Authors:
; ; ;  [1];  [2];  [3]
  1. Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping (Sweden)
  2. Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093 (United States)
  3. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan)
Publication Date:
OSTI Identifier:
22399238
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL COMPOSITION; CONCENTRATION RATIO; DEEP LEVEL TRANSIENT SPECTROSCOPY; EMISSION SPECTROSCOPY; ENERGY LEVELS; EV RANGE; EXCITATION; GALLIUM NITRIDES; HOLES; INDIUM PHOSPHIDES; LIGHT SOURCES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTONS; STRAINS; TRAPPING; TRAPS; VAPOR PHASE EPITAXY

Citation Formats

Dagnelund, D., Huang, Y. Q., Buyanova, I. A., Chen, W. M., Tu, C. W., and Yonezu, H. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP. United States: N. p., 2015. Web. doi:10.1063/1.4905274.
Dagnelund, D., Huang, Y. Q., Buyanova, I. A., Chen, W. M., Tu, C. W., & Yonezu, H. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP. United States. doi:10.1063/1.4905274.
Dagnelund, D., Huang, Y. Q., Buyanova, I. A., Chen, W. M., Tu, C. W., and Yonezu, H. Wed . "Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP". United States. doi:10.1063/1.4905274.
@article{osti_22399238,
title = {Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP},
author = {Dagnelund, D. and Huang, Y. Q. and Buyanova, I. A. and Chen, W. M. and Tu, C. W. and Yonezu, H.},
abstractNote = {By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate that the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.},
doi = {10.1063/1.4905274},
journal = {Journal of Applied Physics},
number = 1,
volume = 117,
place = {United States},
year = {Wed Jan 07 00:00:00 EST 2015},
month = {Wed Jan 07 00:00:00 EST 2015}
}
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