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Title: Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

Abstract

The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation.

Authors:
; ; ; ;  [1]
  1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)
Publication Date:
OSTI Identifier:
22399235
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; GALLIUM NITRIDES; INDIUM; INDIUM COMPOUNDS; INTERFACES; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; QUANTUM WELLS; SURFACES; TEMPERATURE DEPENDENCE; WAVELENGTHS

Citation Formats

Yang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., and Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures. United States: N. p., 2015. Web. doi:10.1063/1.4905419.
Yang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., & Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures. United States. doi:10.1063/1.4905419.
Yang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., and Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw. Wed . "Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures". United States. doi:10.1063/1.4905419.
@article{osti_22399235,
title = {Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures},
author = {Yang, W. C. and Wu, C. H. and Tseng, Y. T. and Chiu, S. Y. and Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw},
abstractNote = {The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation.},
doi = {10.1063/1.4905419},
journal = {Journal of Applied Physics},
number = 1,
volume = 117,
place = {United States},
year = {Wed Jan 07 00:00:00 EST 2015},
month = {Wed Jan 07 00:00:00 EST 2015}
}