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Title: Si/Ge hetero-structure nanotube tunnel field effect transistor

Abstract

We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at V{sub dd} = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when V{sub dd} is scaled down to 0.5 V.

Authors:
;  [1]
  1. Integrated Nanotechnology Lab, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22399219
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GERMANIUM; HALL EFFECT; HETEROJUNCTIONS; NANOTUBES; PERFORMANCE; RECOMBINATION; SILICON; TUNNEL EFFECT

Citation Formats

Hanna, A. N., and Hussain, M. M., E-mail: muhammadmustafa.hussain@kaust.edu.sa. Si/Ge hetero-structure nanotube tunnel field effect transistor. United States: N. p., 2015. Web. doi:10.1063/1.4905423.
Hanna, A. N., & Hussain, M. M., E-mail: muhammadmustafa.hussain@kaust.edu.sa. Si/Ge hetero-structure nanotube tunnel field effect transistor. United States. doi:10.1063/1.4905423.
Hanna, A. N., and Hussain, M. M., E-mail: muhammadmustafa.hussain@kaust.edu.sa. Wed . "Si/Ge hetero-structure nanotube tunnel field effect transistor". United States. doi:10.1063/1.4905423.
@article{osti_22399219,
title = {Si/Ge hetero-structure nanotube tunnel field effect transistor},
author = {Hanna, A. N. and Hussain, M. M., E-mail: muhammadmustafa.hussain@kaust.edu.sa},
abstractNote = {We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at V{sub dd} = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when V{sub dd} is scaled down to 0.5 V.},
doi = {10.1063/1.4905423},
journal = {Journal of Applied Physics},
number = 1,
volume = 117,
place = {United States},
year = {Wed Jan 07 00:00:00 EST 2015},
month = {Wed Jan 07 00:00:00 EST 2015}
}