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Title: Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

Abstract

The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si filmmore » and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.« less

Authors:
 [1];  [2]; ;  [3]
  1. School of Science, Xi'an polytechnic University, Xi'an (China)
  2. (China)
  3. Department of Electronic Engineering, Xi'an University of technology, Xi'an (China)
Publication Date:
OSTI Identifier:
22399194
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS; ELECTRON DIFFRACTION; EPITAXY; HETEROJUNCTIONS; INTERFACES; ORIENTATION; SILICON; SILICON CARBIDES; STRAINS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Li, L. B., E-mail: xpu-lilianbi@163.com, Department of Electronic Engineering, Xi'an University of technology, Xi'an, Chen, Z. M., and Zang, Y. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC. United States: N. p., 2015. Web. doi:10.1063/1.4901644.
Li, L. B., E-mail: xpu-lilianbi@163.com, Department of Electronic Engineering, Xi'an University of technology, Xi'an, Chen, Z. M., & Zang, Y. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC. United States. doi:10.1063/1.4901644.
Li, L. B., E-mail: xpu-lilianbi@163.com, Department of Electronic Engineering, Xi'an University of technology, Xi'an, Chen, Z. M., and Zang, Y. Wed . "Interface-structure of the Si/SiC heterojunction grown on 6H-SiC". United States. doi:10.1063/1.4901644.
@article{osti_22399194,
title = {Interface-structure of the Si/SiC heterojunction grown on 6H-SiC},
author = {Li, L. B., E-mail: xpu-lilianbi@163.com and Department of Electronic Engineering, Xi'an University of technology, Xi'an and Chen, Z. M. and Zang, Y.},
abstractNote = {The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.},
doi = {10.1063/1.4901644},
journal = {Journal of Applied Physics},
number = 1,
volume = 117,
place = {United States},
year = {Wed Jan 07 00:00:00 EST 2015},
month = {Wed Jan 07 00:00:00 EST 2015}
}