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Title: Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Abstract

We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

Authors:
; ; ;  [1];  [1];  [2];  [1];  [3];  [1];  [2]
  1. School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
  2. (Korea, Republic of)
  3. (France)
Publication Date:
OSTI Identifier:
22399187
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARRIER MOBILITY; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; THIN FILMS; TRANSISTORS; TRAPS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES

Citation Formats

Kim, Jae-sung, Piao, Mingxing, Jang, Ho-Kyun, Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr, Oh, Byung Su, Samsung Display Company, Yongin, Joo, Min-Kyu, IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble, Ahn, Seung-Eon, and Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors. United States: N. p., 2014. Web. doi:10.1063/1.4904843.
Kim, Jae-sung, Piao, Mingxing, Jang, Ho-Kyun, Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr, Oh, Byung Su, Samsung Display Company, Yongin, Joo, Min-Kyu, IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble, Ahn, Seung-Eon, & Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors. United States. doi:10.1063/1.4904843.
Kim, Jae-sung, Piao, Mingxing, Jang, Ho-Kyun, Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr, Oh, Byung Su, Samsung Display Company, Yongin, Joo, Min-Kyu, IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble, Ahn, Seung-Eon, and Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712. Sun . "Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors". United States. doi:10.1063/1.4904843.
@article{osti_22399187,
title = {Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors},
author = {Kim, Jae-sung and Piao, Mingxing and Jang, Ho-Kyun and Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr and Oh, Byung Su and Samsung Display Company, Yongin and Joo, Min-Kyu and IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble and Ahn, Seung-Eon and Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712},
abstractNote = {We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.},
doi = {10.1063/1.4904843},
journal = {Journal of Applied Physics},
number = 24,
volume = 116,
place = {United States},
year = {Sun Dec 28 00:00:00 EST 2014},
month = {Sun Dec 28 00:00:00 EST 2014}
}