Effect of geometry and composition on the intraband transitions of holes in quantum dots
Abstract
The effect of shape and size anisotropy on unipolar intraband transitions of holes in quantum dots (QDs) is studied. The optical matrix elements are calculated for transitions of holes in valence band. To get the optical matrix elements, energy eigenvalues and eigenvectors are calculated using 4 × 4 Luttinger Hamiltonian in the effective mass approximation. The formulation is applied to InGaAs/GaAs QD with parabolic confinement potential in xyplane. The optical matrix elements for intraband hole transitions are calculated for x and y polarised light. The transitions are considered from ground state to other excited states. The effect of In concentration on optical matrix elements is also investigated. It is important to note that the transitions of holes are governed by the character of initial and final states for different light polarisations that give specific transition selection rules. It is found that the polarisation is strongly dependent on the inplane anisotropy of the QDs.
 Authors:
 Department of Electronics Engineering, Indian School of Mines, Dhanbad 826004 (India)
 Publication Date:
 OSTI Identifier:
 22399170
 Resource Type:
 Journal Article
 Resource Relation:
 Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; APPROXIMATIONS; CONCENTRATION RATIO; EFFECTIVE MASS; EIGENVALUES; EIGENVECTORS; ENERGYLEVEL TRANSITIONS; EXCITED STATES; GALLIUM ARSENIDES; GROUND STATES; HAMILTONIANS; HOLES; INDIUM ARSENIDES; MATRIX ELEMENTS; POLARIZATION; POTENTIALS; QUANTUM DOTS; SELECTION RULES; VALENCE; VISIBLE RADIATION
Citation Formats
Singh, Satish Kumar, Email: satishsingh.in@gmail.com, and Kumar, Jitendra, Email: jitenkg@rediffmail.com. Effect of geometry and composition on the intraband transitions of holes in quantum dots. United States: N. p., 2014.
Web. doi:10.1063/1.4904863.
Singh, Satish Kumar, Email: satishsingh.in@gmail.com, & Kumar, Jitendra, Email: jitenkg@rediffmail.com. Effect of geometry and composition on the intraband transitions of holes in quantum dots. United States. doi:10.1063/1.4904863.
Singh, Satish Kumar, Email: satishsingh.in@gmail.com, and Kumar, Jitendra, Email: jitenkg@rediffmail.com. 2014.
"Effect of geometry and composition on the intraband transitions of holes in quantum dots". United States.
doi:10.1063/1.4904863.
@article{osti_22399170,
title = {Effect of geometry and composition on the intraband transitions of holes in quantum dots},
author = {Singh, Satish Kumar, Email: satishsingh.in@gmail.com and Kumar, Jitendra, Email: jitenkg@rediffmail.com},
abstractNote = {The effect of shape and size anisotropy on unipolar intraband transitions of holes in quantum dots (QDs) is studied. The optical matrix elements are calculated for transitions of holes in valence band. To get the optical matrix elements, energy eigenvalues and eigenvectors are calculated using 4 × 4 Luttinger Hamiltonian in the effective mass approximation. The formulation is applied to InGaAs/GaAs QD with parabolic confinement potential in xyplane. The optical matrix elements for intraband hole transitions are calculated for x and y polarised light. The transitions are considered from ground state to other excited states. The effect of In concentration on optical matrix elements is also investigated. It is important to note that the transitions of holes are governed by the character of initial and final states for different light polarisations that give specific transition selection rules. It is found that the polarisation is strongly dependent on the inplane anisotropy of the QDs.},
doi = {10.1063/1.4904863},
journal = {Journal of Applied Physics},
number = 24,
volume = 116,
place = {United States},
year = 2014,
month =
}

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