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Title: Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence

Abstract

350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.

Authors:
;  [1];  [2];  [3]
  1. Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DOAE Department, University of Valenciennes et du Hainaut Cambresis, Le Mont Houy, 59313 Valenciennes Cedex 9 (France)
  2. Institut National de la Recherche Scientifique - Energie Matériaux et Télécommunications (INRS-EMT), 10 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada)
  3. Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DHS Department, University of Lille1 Sciences and Technologies, 59652 Villeneuve d'Ascq Cedex (France)
Publication Date:
OSTI Identifier:
22399166
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FINITE ELEMENT METHOD; GHZ RANGE; LAYERS; MICROSTRUCTURE; PERMITTIVITY; PEROVSKITE; POLYCRYSTALS; PZT; RELAXATION TIME; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION

Citation Formats

Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr, Rémiens, D., Sama, N., and Lasri, T. Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence. United States: N. p., 2014. Web. doi:10.1063/1.4904514.
Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr, Rémiens, D., Sama, N., & Lasri, T. Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence. United States. doi:10.1063/1.4904514.
Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr, Rémiens, D., Sama, N., and Lasri, T. Sun . "Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence". United States. doi:10.1063/1.4904514.
@article{osti_22399166,
title = {Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence},
author = {Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr and Rémiens, D. and Sama, N. and Lasri, T.},
abstractNote = {350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.},
doi = {10.1063/1.4904514},
journal = {Journal of Applied Physics},
number = 24,
volume = 116,
place = {United States},
year = {Sun Dec 28 00:00:00 EST 2014},
month = {Sun Dec 28 00:00:00 EST 2014}
}