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Title: Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices

Abstract

We performed thousands of single-shot, real-time measurements of spin-transfer-torque induced switching in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junctions having in-plane magnetizations. Our investigation discovered a variety of switching paths occurring in consecutive, nominally identical switching trials of a single device. By mapping the voltage as a function of time to an effective magnetization angle, we determined that reversal of a single device occurs via a variety of thermally activated paths. Our results show a complex switching behavior that has not been captured by previous observations and cannot be fully explained within the simple macrospin model.

Authors:
 [1]; ; ;  [2]
  1. Department of Physics and Astronomy, San Jose State University, San Jose, California 95112 (United States)
  2. National Institute of Standards and Technology (NIST), Boulder, Colorado 80305 (United States)
Publication Date:
OSTI Identifier:
22399155
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COBALT COMPOUNDS; HETEROJUNCTIONS; IRON BORIDES; MAGNESIUM OXIDES; MAGNETIC FIELD REVERSAL; MAGNETIZATION; SPIN; SUPERCONDUCTING JUNCTIONS; TIME DEPENDENCE

Citation Formats

Heindl, R., E-mail: ranko.heindl@sjsu.edu, Rippard, W. H., Russek, S. E., and Pufall, M. R. Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices. United States: N. p., 2014. Web. doi:10.1063/1.4905023.
Heindl, R., E-mail: ranko.heindl@sjsu.edu, Rippard, W. H., Russek, S. E., & Pufall, M. R. Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices. United States. doi:10.1063/1.4905023.
Heindl, R., E-mail: ranko.heindl@sjsu.edu, Rippard, W. H., Russek, S. E., and Pufall, M. R. Sun . "Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices". United States. doi:10.1063/1.4905023.
@article{osti_22399155,
title = {Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices},
author = {Heindl, R., E-mail: ranko.heindl@sjsu.edu and Rippard, W. H. and Russek, S. E. and Pufall, M. R.},
abstractNote = {We performed thousands of single-shot, real-time measurements of spin-transfer-torque induced switching in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junctions having in-plane magnetizations. Our investigation discovered a variety of switching paths occurring in consecutive, nominally identical switching trials of a single device. By mapping the voltage as a function of time to an effective magnetization angle, we determined that reversal of a single device occurs via a variety of thermally activated paths. Our results show a complex switching behavior that has not been captured by previous observations and cannot be fully explained within the simple macrospin model.},
doi = {10.1063/1.4905023},
journal = {Journal of Applied Physics},
number = 24,
volume = 116,
place = {United States},
year = {Sun Dec 28 00:00:00 EST 2014},
month = {Sun Dec 28 00:00:00 EST 2014}
}