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Title: Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]

Abstract

No abstract prepared.

Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering and Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22399143
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFINEMENT; ELECTRONS; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLES; LAYERS; QUANTUM MECHANICS; TUNNEL EFFECT

Citation Formats

Hsu, William, E-mail: william.hsu@utexas.edu, Mantey, Jason, Register, Leonard F., and Banerjee, Sanjay K.. Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]. United States: N. p., 2015. Web. doi:10.1063/1.4905865.
Hsu, William, E-mail: william.hsu@utexas.edu, Mantey, Jason, Register, Leonard F., & Banerjee, Sanjay K.. Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]. United States. doi:10.1063/1.4905865.
Hsu, William, E-mail: william.hsu@utexas.edu, Mantey, Jason, Register, Leonard F., and Banerjee, Sanjay K.. Mon . "Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]". United States. doi:10.1063/1.4905865.
@article{osti_22399143,
title = {Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]},
author = {Hsu, William, E-mail: william.hsu@utexas.edu and Mantey, Jason and Register, Leonard F. and Banerjee, Sanjay K.},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.4905865},
journal = {Applied Physics Letters},
number = 2,
volume = 106,
place = {United States},
year = {Mon Jan 12 00:00:00 EST 2015},
month = {Mon Jan 12 00:00:00 EST 2015}
}