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Title: High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application

Abstract

For phase change memory (PCM) applications, it has been widely accepted that δ phase Sb-Te has fast operation speed and good phase stability. However, the fast growth crystallization mechanism will cause poor amorphous phase stability and overlarge grain size. We introduce TiN{sub 2} into δ phase Sb-Te (Sb{sub 3}Te) to enhance the amorphous thermal stability and refine the grain size. With TiN{sub 2} incorporating, the temperature for 10-year data retention increases from 79 °C to 124 °C. And the grain size decreases to dozens of nanometers scale. Based on X-ray photoelectron spectroscopy and transmission electron microscopy results, we knew that nitrogen atoms bond with titanium, forming disorder region at the grain boundary of Sb{sub 3}Te-TiN{sub 2} (STTN). Thus, STTN has a quite different crystallization mechanism from Sb{sub 3}Te. Furthermore, PCM device based on STTN can realize reversible phase change under 20 ns electrical pulse.

Authors:
;  [1];  [2]; ; ; ; ; ;  [1]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, 200050 Shanghai (China)
  2. (China)
Publication Date:
OSTI Identifier:
22399131
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANTIMONY; ATOMS; CRYSTALLIZATION; GRAIN BOUNDARIES; GRAIN SIZE; NITROGEN; PHASE STABILITY; RETENTION; TELLURIUM; TITANIUM; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; VELOCITY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Ji, Xinglong, Zhou, Wangyang, Graduate School of the Chinese Academy of Sciences, 100080 Beijing, Wu, Liangcai, E-mail: wuliangcai@mail.sim.ac.cn, Zhu, Min, Rao, Feng, Song, Zhitang, Cao, Liangliang, and Feng, Songlin. High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application. United States: N. p., 2015. Web. doi:10.1063/1.4905551.
Ji, Xinglong, Zhou, Wangyang, Graduate School of the Chinese Academy of Sciences, 100080 Beijing, Wu, Liangcai, E-mail: wuliangcai@mail.sim.ac.cn, Zhu, Min, Rao, Feng, Song, Zhitang, Cao, Liangliang, & Feng, Songlin. High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application. United States. doi:10.1063/1.4905551.
Ji, Xinglong, Zhou, Wangyang, Graduate School of the Chinese Academy of Sciences, 100080 Beijing, Wu, Liangcai, E-mail: wuliangcai@mail.sim.ac.cn, Zhu, Min, Rao, Feng, Song, Zhitang, Cao, Liangliang, and Feng, Songlin. Mon . "High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application". United States. doi:10.1063/1.4905551.
@article{osti_22399131,
title = {High thermal stability Sb{sub 3}Te-TiN{sub 2} material for phase change memory application},
author = {Ji, Xinglong and Zhou, Wangyang and Graduate School of the Chinese Academy of Sciences, 100080 Beijing and Wu, Liangcai, E-mail: wuliangcai@mail.sim.ac.cn and Zhu, Min and Rao, Feng and Song, Zhitang and Cao, Liangliang and Feng, Songlin},
abstractNote = {For phase change memory (PCM) applications, it has been widely accepted that δ phase Sb-Te has fast operation speed and good phase stability. However, the fast growth crystallization mechanism will cause poor amorphous phase stability and overlarge grain size. We introduce TiN{sub 2} into δ phase Sb-Te (Sb{sub 3}Te) to enhance the amorphous thermal stability and refine the grain size. With TiN{sub 2} incorporating, the temperature for 10-year data retention increases from 79 °C to 124 °C. And the grain size decreases to dozens of nanometers scale. Based on X-ray photoelectron spectroscopy and transmission electron microscopy results, we knew that nitrogen atoms bond with titanium, forming disorder region at the grain boundary of Sb{sub 3}Te-TiN{sub 2} (STTN). Thus, STTN has a quite different crystallization mechanism from Sb{sub 3}Te. Furthermore, PCM device based on STTN can realize reversible phase change under 20 ns electrical pulse.},
doi = {10.1063/1.4905551},
journal = {Applied Physics Letters},
number = 2,
volume = 106,
place = {United States},
year = {Mon Jan 12 00:00:00 EST 2015},
month = {Mon Jan 12 00:00:00 EST 2015}
}