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Title: Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

Abstract

Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

Authors:
; ;  [1]; ;  [2]
  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  2. Micron Semiconductor Italia S.r.l., Via C. Olivetti, 2, 20864, Agrate Brianza, MB (Italy)
Publication Date:
OSTI Identifier:
22399130
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONIDES; APPROXIMATIONS; CHALCOGENIDES; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; FILMS; GERMANIUM TELLURIDES; GRAIN SIZE; MOLECULAR BEAM EPITAXY; OPERATION; PERFORMANCE; PHASE CHANGE MATERIALS; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALS; SUBSTRATES; SURFACES

Citation Formats

Boschker, Jos E., Riechert, Henning, Calarco, Raffaella, Boniardi, Mattia, and Redaelli, Andrea. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4906060.
Boschker, Jos E., Riechert, Henning, Calarco, Raffaella, Boniardi, Mattia, & Redaelli, Andrea. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy. United States. doi:10.1063/1.4906060.
Boschker, Jos E., Riechert, Henning, Calarco, Raffaella, Boniardi, Mattia, and Redaelli, Andrea. Mon . "Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy". United States. doi:10.1063/1.4906060.
@article{osti_22399130,
title = {Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy},
author = {Boschker, Jos E. and Riechert, Henning and Calarco, Raffaella and Boniardi, Mattia and Redaelli, Andrea},
abstractNote = {Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.},
doi = {10.1063/1.4906060},
journal = {Applied Physics Letters},
number = 2,
volume = 106,
place = {United States},
year = {Mon Jan 12 00:00:00 EST 2015},
month = {Mon Jan 12 00:00:00 EST 2015}
}