Synthesized multiwall MoS{sub 2} nanotube and nanoribbon field-effect transistors
- Solid State Physics Department, Jožef Stefan Institute, Ljubljana (Slovenia)
- Department of Electrical Engineering, Cornell University, Ithaca, New York 14850 (United States)
- Department of Materials Engineering, Korea Aerospace University, Gyeonggi 412791 (Korea, Republic of)
We report on the fabrication and characterization of synthesized multiwall MoS{sub 2} nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS{sub 2} NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS{sub 2} in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements, allowing the estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10{sup 3}, and with current densities of 1.02 μA/μm and 0.79 μA/μm at V{sub DS} = 0.3 V and V{sub BG} = 1 V, respectively. Photocurrent measurements conducted on a MoS{sub 2} NT FET revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS{sub 2} NT and NR FETs and was shown to be consistent with the measured data.
- OSTI ID:
- 22399113
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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