Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Journal Article · Mon Jan 12 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905783· OSTI ID:22399104

Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Speck, J. S. ^[1]; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. ^[2]

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1. Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States)
2. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 10{sup 13 }cm{sup −2} and 3 × 10{sup 13 }cm{sup −2} fluences not only introduces a trap with an E{sub V} + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at E{sub V} + 0.48 eV, E{sub V} + 2.42 eV, E{sub V} + 3.00 eV, and E{sub V} + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

• OSTI ID: 22399104
• Journal Information: Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ACTIVATION ENERGY
AMMONIA
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
CRYSTAL LATTICES
DOPED MATERIALS
ENERGY GAP
EV RANGE
GALLIUM
GALLIUM NITRIDES
IRRADIATION
MEV RANGE
MOLECULAR BEAM EPITAXY
NITROGEN
PHYSICAL RADIATION EFFECTS
PROTONS
TRANSIENTS
TRAPS
VACANCIES