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Title: Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

Abstract

We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

Authors:
; ; ;  [1];  [2]
  1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22399089
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; INTERFACES; LAYERS; MOLYBDENUM SULFIDES; NUCLEATION; PRECURSOR; SURFACES; TEMPERATURE DEPENDENCE

Citation Formats

Son, Seokki, Choi, Moonseok, Kim, Dohyung, Choi, Changhwan, E-mail: cchoi@hanyang.ac.kr, and Yu, Sunmoon. Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer. United States: N. p., 2015. Web. doi:10.1063/1.4905634.
Son, Seokki, Choi, Moonseok, Kim, Dohyung, Choi, Changhwan, E-mail: cchoi@hanyang.ac.kr, & Yu, Sunmoon. Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer. United States. doi:10.1063/1.4905634.
Son, Seokki, Choi, Moonseok, Kim, Dohyung, Choi, Changhwan, E-mail: cchoi@hanyang.ac.kr, and Yu, Sunmoon. Mon . "Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer". United States. doi:10.1063/1.4905634.
@article{osti_22399089,
title = {Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer},
author = {Son, Seokki and Choi, Moonseok and Kim, Dohyung and Choi, Changhwan, E-mail: cchoi@hanyang.ac.kr and Yu, Sunmoon},
abstractNote = {We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.},
doi = {10.1063/1.4905634},
journal = {Applied Physics Letters},
number = 2,
volume = 106,
place = {United States},
year = {Mon Jan 12 00:00:00 EST 2015},
month = {Mon Jan 12 00:00:00 EST 2015}
}