skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: An electrically injected rolled-up semiconductor tube laser

Abstract

We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
Publication Date:
OSTI Identifier:
22399083
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASERS; PHOTON EMISSION; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STRAINS; SUBSTRATES; TUBES; WAVELENGTHS

Citation Formats

Dastjerdi, M. H. T., Djavid, M., and Mi, Z., E-mail: zetian.mi@mcgill.ca. An electrically injected rolled-up semiconductor tube laser. United States: N. p., 2015. Web. doi:10.1063/1.4906238.
Dastjerdi, M. H. T., Djavid, M., & Mi, Z., E-mail: zetian.mi@mcgill.ca. An electrically injected rolled-up semiconductor tube laser. United States. doi:10.1063/1.4906238.
Dastjerdi, M. H. T., Djavid, M., and Mi, Z., E-mail: zetian.mi@mcgill.ca. Mon . "An electrically injected rolled-up semiconductor tube laser". United States. doi:10.1063/1.4906238.
@article{osti_22399083,
title = {An electrically injected rolled-up semiconductor tube laser},
author = {Dastjerdi, M. H. T. and Djavid, M. and Mi, Z., E-mail: zetian.mi@mcgill.ca},
abstractNote = {We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.},
doi = {10.1063/1.4906238},
journal = {Applied Physics Letters},
number = 2,
volume = 106,
place = {United States},
year = {Mon Jan 12 00:00:00 EST 2015},
month = {Mon Jan 12 00:00:00 EST 2015}
}