Acceptor impurity activation in III-nitride light emitting diodes
- Department of Electrical Engineering, University of Kassel, 34121 Kassel (Germany)
In this work, the role of the acceptor doping and the acceptor activation and its impact on the internal quantum efficiency (IQE) of a Gallium Nitride (GaN) based multi-quantum well light emitting diode is studied by microscopic simulation. Acceptor impurities in GaN are subject to a high activation energy which depends on the presence of proximate dopant atoms and the electric field. A combined model for the dopant ionization and activation barrier reduction has been developed and implemented in a semiconductor carrier transport simulator. By model calculations, we demonstrate the impact of the acceptor activation mechanisms on the decay of the IQE at high current densities, which is known as the efficiency droop. A major contributor to the droop is the electron leakage which is largely affected by the acceptor doping.
- OSTI ID:
- 22399078
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
ACTIVATION ENERGY
ATOMS
COMPUTERIZED SIMULATION
CURRENT DENSITY
DIFFUSION BARRIERS
ELECTRIC FIELDS
ELECTRONS
GALLIUM NITRIDES
IMPURITIES
IONIZATION
LIGHT EMITTING DIODES
QUANTUM EFFICIENCY
QUANTUM WELLS
REDUCTION
SEMICONDUCTOR MATERIALS
SIMULATORS