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Title: All-optical depletion of dark excitons from a semiconductor quantum dot

Abstract

Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.

Authors:
; ; ;  [1];  [1];  [2]; ;  [3]
  1. The Physics Department and the Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel)
  2. (Israel)
  3. Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin (Germany)
Publication Date:
OSTI Identifier:
22399052
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; EFFICIENCY; EXCITED STATES; EXCITONS; OPTICAL PUMPING; PHOTON EMISSION; QUANTUM DOTS; SEMICONDUCTOR MATERIALS

Citation Formats

Schmidgall, E. R., Schwartz, I., Cogan, D., Gershoni, D., Gantz, L., Department of Electrical Engineering, Technion-Israel Institute of Technology, Hafia 32000, Heindel, T., and Reitzenstein, S. All-optical depletion of dark excitons from a semiconductor quantum dot. United States: N. p., 2015. Web. doi:10.1063/1.4921000.
Schmidgall, E. R., Schwartz, I., Cogan, D., Gershoni, D., Gantz, L., Department of Electrical Engineering, Technion-Israel Institute of Technology, Hafia 32000, Heindel, T., & Reitzenstein, S. All-optical depletion of dark excitons from a semiconductor quantum dot. United States. doi:10.1063/1.4921000.
Schmidgall, E. R., Schwartz, I., Cogan, D., Gershoni, D., Gantz, L., Department of Electrical Engineering, Technion-Israel Institute of Technology, Hafia 32000, Heindel, T., and Reitzenstein, S. Mon . "All-optical depletion of dark excitons from a semiconductor quantum dot". United States. doi:10.1063/1.4921000.
@article{osti_22399052,
title = {All-optical depletion of dark excitons from a semiconductor quantum dot},
author = {Schmidgall, E. R. and Schwartz, I. and Cogan, D. and Gershoni, D. and Gantz, L. and Department of Electrical Engineering, Technion-Israel Institute of Technology, Hafia 32000 and Heindel, T. and Reitzenstein, S.},
abstractNote = {Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.},
doi = {10.1063/1.4921000},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}