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Title: Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

Abstract

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

Authors:
; ; ; ; ; ;  [1]; ; ;  [2]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)
  2. The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)
Publication Date:
OSTI Identifier:
22399041
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; EXCITATION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; NEAR INFRARED RADIATION; PERIODICITY; PHOTOCURRENTS; POLARIZATION; POTENTIALS; RAMAN SPECTROSCOPY; SPIN; SPIN ORIENTATION; STRAINS; SUPERLATTICES

Citation Formats

Li, Yuan, E-mail: liyuan12@semi.ac.cn, Liu, Yu, Zhu, Laipan, Qin, Xudong, Wu, Qing, Huang, Wei, Chen, Yonghai, E-mail: yhchen@semi.ac.cn, Niu, Zhichuan, Xiang, Wei, and Hao, Hongyue. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice. United States: N. p., 2015. Web. doi:10.1063/1.4919894.
Li, Yuan, E-mail: liyuan12@semi.ac.cn, Liu, Yu, Zhu, Laipan, Qin, Xudong, Wu, Qing, Huang, Wei, Chen, Yonghai, E-mail: yhchen@semi.ac.cn, Niu, Zhichuan, Xiang, Wei, & Hao, Hongyue. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice. United States. doi:10.1063/1.4919894.
Li, Yuan, E-mail: liyuan12@semi.ac.cn, Liu, Yu, Zhu, Laipan, Qin, Xudong, Wu, Qing, Huang, Wei, Chen, Yonghai, E-mail: yhchen@semi.ac.cn, Niu, Zhichuan, Xiang, Wei, and Hao, Hongyue. Mon . "Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice". United States. doi:10.1063/1.4919894.
@article{osti_22399041,
title = {Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice},
author = {Li, Yuan, E-mail: liyuan12@semi.ac.cn and Liu, Yu and Zhu, Laipan and Qin, Xudong and Wu, Qing and Huang, Wei and Chen, Yonghai, E-mail: yhchen@semi.ac.cn and Niu, Zhichuan and Xiang, Wei and Hao, Hongyue},
abstractNote = {In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.},
doi = {10.1063/1.4919894},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}