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Title: Electronic properties of substitutional impurities in InGaN monolayer quantum wells

Abstract

InGaN alloys and, in particular, InGaN monolayer quantum wells (MLQWs) are attracting an increasing amount of interest for opto-electronic applications. Impurities, incorporated during growth, can introduce electronic states that can degrade the performance of such devices. For this reason, we present a density functional and group theoretical study of the electronic properties of C, H, or O impurities in an InGaN MLQW. Analysis of the formation energy and symmetry reveals that these impurities are mostly donors and can be held accountable for the reported degradation of InGaN-based devices.

Authors:
 [1]; ;  [2]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
  2. Department of Materials System Science, Yokohama City University, Yokohama 236-0027 (Japan)
Publication Date:
OSTI Identifier:
22399039
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; FORMATION HEAT; GALLIUM NITRIDES; IMPURITIES; INDIUM COMPOUNDS; PERFORMANCE; QUANTUM WELLS; SYMMETRY

Citation Formats

Alfieri, G., Tsutsumi, T., and Micheletto, R. Electronic properties of substitutional impurities in InGaN monolayer quantum wells. United States: N. p., 2015. Web. doi:10.1063/1.4919787.
Alfieri, G., Tsutsumi, T., & Micheletto, R. Electronic properties of substitutional impurities in InGaN monolayer quantum wells. United States. doi:10.1063/1.4919787.
Alfieri, G., Tsutsumi, T., and Micheletto, R. Mon . "Electronic properties of substitutional impurities in InGaN monolayer quantum wells". United States. doi:10.1063/1.4919787.
@article{osti_22399039,
title = {Electronic properties of substitutional impurities in InGaN monolayer quantum wells},
author = {Alfieri, G. and Tsutsumi, T. and Micheletto, R.},
abstractNote = {InGaN alloys and, in particular, InGaN monolayer quantum wells (MLQWs) are attracting an increasing amount of interest for opto-electronic applications. Impurities, incorporated during growth, can introduce electronic states that can degrade the performance of such devices. For this reason, we present a density functional and group theoretical study of the electronic properties of C, H, or O impurities in an InGaN MLQW. Analysis of the formation energy and symmetry reveals that these impurities are mostly donors and can be held accountable for the reported degradation of InGaN-based devices.},
doi = {10.1063/1.4919787},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}