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Title: Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO{sub 3}:Nb junctions

Abstract

Schottky junctions made from platinum and niobium-doped strontium titanate (SrTiO{sub 3}:Nb) were investigated by hard X-ray photoemission (HXPES) and through a band bending behavior simulation using a phenomenological model, which assumes a decrease in dielectric constant due to an electric field. Thus, we confirmed that the observed HXPES spectra at relatively high temperatures, e.g., >250 K, were well simulated using this phenomenological model. In contrast, it was inferred that the model was not appropriate for junction behavior at lower temperatures, e.g., <150 K. Therefore, a reconstruction of the phenomenological model is necessary to adequately explain the dielectric properties of SrTiO{sub 3}.

Authors:
 [1]; ; ; ; ;  [1];  [2];  [3];  [1]
  1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. Synchrotron X-ray Station at SPring-8, NIMS, 1-1-1 Kouto, Sayo, Hyogo 679-5148 (Japan)
  3. Murata Manufacturing Co., Ltd., 10–1, Higashikotari 1–chome, Nagaokakyo–shi, Kyoto 617–8555 (Japan)
Publication Date:
OSTI Identifier:
22399035
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRIC FIELDS; EMISSION SPECTRA; HARD X RADIATION; NIOBIUM; PERMITTIVITY; PHOTOEMISSION; PLATINUM; SEMICONDUCTOR JUNCTIONS; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE

Citation Formats

Hirose, Sakyo, Murata Manufacturing Co., Ltd., 10–1, Higashikotari 1–chome, Nagaokakyo–shi, Kyoto 617–8555, Okushi, Hideyo, Yoshikawa, Hideki, Adachi, Yutaka, Ohsawa, Takeo, Haneda, Hajime, Ueda, Shigenori, Ando, Akira, Ohashi, Naoki, and Materials Research Center for Element Strategy. Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO{sub 3}:Nb junctions. United States: N. p., 2015. Web. doi:10.1063/1.4921092.
Hirose, Sakyo, Murata Manufacturing Co., Ltd., 10–1, Higashikotari 1–chome, Nagaokakyo–shi, Kyoto 617–8555, Okushi, Hideyo, Yoshikawa, Hideki, Adachi, Yutaka, Ohsawa, Takeo, Haneda, Hajime, Ueda, Shigenori, Ando, Akira, Ohashi, Naoki, & Materials Research Center for Element Strategy. Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO{sub 3}:Nb junctions. United States. https://doi.org/10.1063/1.4921092
Hirose, Sakyo, Murata Manufacturing Co., Ltd., 10–1, Higashikotari 1–chome, Nagaokakyo–shi, Kyoto 617–8555, Okushi, Hideyo, Yoshikawa, Hideki, Adachi, Yutaka, Ohsawa, Takeo, Haneda, Hajime, Ueda, Shigenori, Ando, Akira, Ohashi, Naoki, and Materials Research Center for Element Strategy. 2015. "Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO{sub 3}:Nb junctions". United States. https://doi.org/10.1063/1.4921092.
@article{osti_22399035,
title = {Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO{sub 3}:Nb junctions},
author = {Hirose, Sakyo and Murata Manufacturing Co., Ltd., 10–1, Higashikotari 1–chome, Nagaokakyo–shi, Kyoto 617–8555 and Okushi, Hideyo and Yoshikawa, Hideki and Adachi, Yutaka and Ohsawa, Takeo and Haneda, Hajime and Ueda, Shigenori and Ando, Akira and Ohashi, Naoki and Materials Research Center for Element Strategy},
abstractNote = {Schottky junctions made from platinum and niobium-doped strontium titanate (SrTiO{sub 3}:Nb) were investigated by hard X-ray photoemission (HXPES) and through a band bending behavior simulation using a phenomenological model, which assumes a decrease in dielectric constant due to an electric field. Thus, we confirmed that the observed HXPES spectra at relatively high temperatures, e.g., >250 K, were well simulated using this phenomenological model. In contrast, it was inferred that the model was not appropriate for junction behavior at lower temperatures, e.g., <150 K. Therefore, a reconstruction of the phenomenological model is necessary to adequately explain the dielectric properties of SrTiO{sub 3}.},
doi = {10.1063/1.4921092},
url = {https://www.osti.gov/biblio/22399035}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 106,
place = {United States},
year = {Mon May 11 00:00:00 EDT 2015},
month = {Mon May 11 00:00:00 EDT 2015}
}