skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Shape transition in nano-pits after solid-phase etching of SiO{sub 2} by Si islands

Abstract

We study the nano-pits formed during the etching of a SiO{sub 2} film by reactive Si islands at T≈1000 °C. Combining low energy electron microscopy, atomic force microscopy, kinetic Monte Carlo simulations, and an analytic model based on reaction and diffusion at the solid interface, we show that the shape of the nanopits depend on the ratio R/x{sub s} with R the Si island radius and x{sub s} the oxygen diffusion-length at the Si/SiO{sub 2} interface. For small R/x{sub s}, nanopits exhibit a single-well V-shape, while a double-well W-shape is found for larger R/x{sub s}. The analysis of the transition reveals that x{sub s}∼60 nm at T≈1000 °C.

Authors:
; ; ;  [1];  [2];  [3]
  1. Aix Marseille Université CNRS, CINaM UMR 7325, 13288 Marseille (France)
  2. Department of Physics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama (Japan)
  3. Institut Lumière Matière, UMR 5306 Université Lyon-1-CNRS, 69622 Villeurbanne (France)
Publication Date:
OSTI Identifier:
22399034
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; COMPUTERIZED SIMULATION; DIFFUSION; DIFFUSION LENGTH; ELECTRON MICROSCOPY; ETCHING; FILMS; INTERFACES; MONTE CARLO METHOD; OXYGEN; SILICON; SILICON OXIDES; SOLIDS

Citation Formats

Leroy, F., Curiotto, S., Cheynis, F., Müller, P., Saito, Y., and Pierre-Louis, O. Shape transition in nano-pits after solid-phase etching of SiO{sub 2} by Si islands. United States: N. p., 2015. Web. doi:10.1063/1.4921091.
Leroy, F., Curiotto, S., Cheynis, F., Müller, P., Saito, Y., & Pierre-Louis, O. Shape transition in nano-pits after solid-phase etching of SiO{sub 2} by Si islands. United States. doi:10.1063/1.4921091.
Leroy, F., Curiotto, S., Cheynis, F., Müller, P., Saito, Y., and Pierre-Louis, O. Mon . "Shape transition in nano-pits after solid-phase etching of SiO{sub 2} by Si islands". United States. doi:10.1063/1.4921091.
@article{osti_22399034,
title = {Shape transition in nano-pits after solid-phase etching of SiO{sub 2} by Si islands},
author = {Leroy, F. and Curiotto, S. and Cheynis, F. and Müller, P. and Saito, Y. and Pierre-Louis, O.},
abstractNote = {We study the nano-pits formed during the etching of a SiO{sub 2} film by reactive Si islands at T≈1000 °C. Combining low energy electron microscopy, atomic force microscopy, kinetic Monte Carlo simulations, and an analytic model based on reaction and diffusion at the solid interface, we show that the shape of the nanopits depend on the ratio R/x{sub s} with R the Si island radius and x{sub s} the oxygen diffusion-length at the Si/SiO{sub 2} interface. For small R/x{sub s}, nanopits exhibit a single-well V-shape, while a double-well W-shape is found for larger R/x{sub s}. The analysis of the transition reveals that x{sub s}∼60 nm at T≈1000 °C.},
doi = {10.1063/1.4921091},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}