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Title: Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates

Abstract

We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.

Authors:
; ; ; ; ;  [1]
  1. QuTech Advanced Research Center and Kavli Institute of Nanosicence, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (Netherlands)
Publication Date:
OSTI Identifier:
22399007
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; ELECTRIC FIELDS; ENERGY LOSSES; ETCHING; INTERFACES; IONS; METALS; MICROWAVE RADIATION; NIOBIUM COMPOUNDS; OPTIMIZATION; PERFORMANCE; QUALITY FACTOR; RESONATORS; SILICON; SUBSTRATES; SURFACE TREATMENTS; TITANIUM NITRIDES

Citation Formats

Bruno, A., Lange, G. de, Asaad, S., Enden, K. L. van der, Langford, N. K., and DiCarlo, L. Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates. United States: N. p., 2015. Web. doi:10.1063/1.4919761.
Bruno, A., Lange, G. de, Asaad, S., Enden, K. L. van der, Langford, N. K., & DiCarlo, L. Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates. United States. doi:10.1063/1.4919761.
Bruno, A., Lange, G. de, Asaad, S., Enden, K. L. van der, Langford, N. K., and DiCarlo, L. Mon . "Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates". United States. doi:10.1063/1.4919761.
@article{osti_22399007,
title = {Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates},
author = {Bruno, A. and Lange, G. de and Asaad, S. and Enden, K. L. van der and Langford, N. K. and DiCarlo, L.},
abstractNote = {We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.},
doi = {10.1063/1.4919761},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}