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Title: Effects of the d-donor level of vanadium on the properties of Zn{sub 1−x}V{sub x}O films

Abstract

We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn{sub 1−x}V{sub x}O with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E{sub +}) and the downward shift of the fully occupied E{sub −} band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E{sub +}) and PL peak (E{sub −}) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [2];  [1];  [2];  [4]
  1. Dpto. de Física Aplicada III (Electricidad y Electrónica), Univ. Complutense de Madrid, Madrid 28040 (Spain)
  2. (Spain)
  3. (United States)
  4. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
  5. (Hong Kong)
  6. CEI Campus Moncloa, UCM-UPM, Madrid 28040 (Spain)
Publication Date:
OSTI Identifier:
22398999
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CONCENTRATION RATIO; COUPLING CONSTANTS; D STATES; ELECTRONIC STRUCTURE; ELECTRONS; EV RANGE; FILMS; LAYERS; MAGNETRONS; PHOTOLUMINESCENCE; POLYCRYSTALS; SPUTTERING; VANADIUM; ZINC OXIDES

Citation Formats

García-Hemme, E., E-mail: eric.garcia@ucm.es, CEI Campus Moncloa, UCM-UPM, Madrid 28040, Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, Yu, K. M., Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Wahnon, P., Instituto de Energía Solar and Depto TFB, E.T.S.I. Telecomunicación, Univ. Politécnica de Madrid, Ciudad Universitaria, Madrid 28040, González-Díaz, G., CEI Campus Moncloa, UCM-UPM, Madrid 28040, and Walukiewicz, W. Effects of the d-donor level of vanadium on the properties of Zn{sub 1−x}V{sub x}O films. United States: N. p., 2015. Web. doi:10.1063/1.4919791.
García-Hemme, E., E-mail: eric.garcia@ucm.es, CEI Campus Moncloa, UCM-UPM, Madrid 28040, Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, Yu, K. M., Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Wahnon, P., Instituto de Energía Solar and Depto TFB, E.T.S.I. Telecomunicación, Univ. Politécnica de Madrid, Ciudad Universitaria, Madrid 28040, González-Díaz, G., CEI Campus Moncloa, UCM-UPM, Madrid 28040, & Walukiewicz, W. Effects of the d-donor level of vanadium on the properties of Zn{sub 1−x}V{sub x}O films. United States. doi:10.1063/1.4919791.
García-Hemme, E., E-mail: eric.garcia@ucm.es, CEI Campus Moncloa, UCM-UPM, Madrid 28040, Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, Yu, K. M., Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Wahnon, P., Instituto de Energía Solar and Depto TFB, E.T.S.I. Telecomunicación, Univ. Politécnica de Madrid, Ciudad Universitaria, Madrid 28040, González-Díaz, G., CEI Campus Moncloa, UCM-UPM, Madrid 28040, and Walukiewicz, W. Mon . "Effects of the d-donor level of vanadium on the properties of Zn{sub 1−x}V{sub x}O films". United States. doi:10.1063/1.4919791.
@article{osti_22398999,
title = {Effects of the d-donor level of vanadium on the properties of Zn{sub 1−x}V{sub x}O films},
author = {García-Hemme, E., E-mail: eric.garcia@ucm.es and CEI Campus Moncloa, UCM-UPM, Madrid 28040 and Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 and Yu, K. M. and Department of Physics and Materials Science, City University of Hong Kong, Kowloon and Wahnon, P. and Instituto de Energía Solar and Depto TFB, E.T.S.I. Telecomunicación, Univ. Politécnica de Madrid, Ciudad Universitaria, Madrid 28040 and González-Díaz, G. and CEI Campus Moncloa, UCM-UPM, Madrid 28040 and Walukiewicz, W.},
abstractNote = {We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn{sub 1−x}V{sub x}O with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E{sub +}) and the downward shift of the fully occupied E{sub −} band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E{sub +}) and PL peak (E{sub −}) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.},
doi = {10.1063/1.4919791},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}