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Title: Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation

Abstract

Transition metal dichalcogenides such as the semiconductor MoS{sub 2} are a class of two-dimensional crystals. The surface morphology and quality of MoS{sub 2} grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS{sub 2} islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS{sub 2} adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS{sub 2} grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.

Authors:
; ; ; ; ; ; ;  [1]; ; ; ;  [2];  [1];  [3]
  1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China)
  3. (China)
Publication Date:
OSTI Identifier:
22398997
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALS; GRAPHITE; MOLYBDENUM SULFIDES; MORPHOLOGY; ORIENTATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Lu, Chun-I, Butler, Christopher John, Yang, Hung-Hsiang, Chu, Yu-Hsun, Luo, Chi-Hung, Sun, Yung-Che, Hsu, Shih-Hao, Yang, Kui-Hong Ou, Huang, Jing-Kai, Hsing, Cheng-Rong, Wei, Ching-Ming, E-mail: cmw@phys.sinica.edu.tw, Li, Lain-Jong, E-mail: lanceli@gate.sinica.edu.tw, Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw, and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan. Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation. United States: N. p., 2015. Web. doi:10.1063/1.4919923.
Lu, Chun-I, Butler, Christopher John, Yang, Hung-Hsiang, Chu, Yu-Hsun, Luo, Chi-Hung, Sun, Yung-Che, Hsu, Shih-Hao, Yang, Kui-Hong Ou, Huang, Jing-Kai, Hsing, Cheng-Rong, Wei, Ching-Ming, E-mail: cmw@phys.sinica.edu.tw, Li, Lain-Jong, E-mail: lanceli@gate.sinica.edu.tw, Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw, & Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan. Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation. United States. doi:10.1063/1.4919923.
Lu, Chun-I, Butler, Christopher John, Yang, Hung-Hsiang, Chu, Yu-Hsun, Luo, Chi-Hung, Sun, Yung-Che, Hsu, Shih-Hao, Yang, Kui-Hong Ou, Huang, Jing-Kai, Hsing, Cheng-Rong, Wei, Ching-Ming, E-mail: cmw@phys.sinica.edu.tw, Li, Lain-Jong, E-mail: lanceli@gate.sinica.edu.tw, Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw, and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan. Mon . "Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation". United States. doi:10.1063/1.4919923.
@article{osti_22398997,
title = {Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation},
author = {Lu, Chun-I and Butler, Christopher John and Yang, Hung-Hsiang and Chu, Yu-Hsun and Luo, Chi-Hung and Sun, Yung-Che and Hsu, Shih-Hao and Yang, Kui-Hong Ou and Huang, Jing-Kai and Hsing, Cheng-Rong and Wei, Ching-Ming, E-mail: cmw@phys.sinica.edu.tw and Li, Lain-Jong, E-mail: lanceli@gate.sinica.edu.tw and Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan},
abstractNote = {Transition metal dichalcogenides such as the semiconductor MoS{sub 2} are a class of two-dimensional crystals. The surface morphology and quality of MoS{sub 2} grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS{sub 2} islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS{sub 2} adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS{sub 2} grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.},
doi = {10.1063/1.4919923},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}