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Title: Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

Abstract

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

Authors:
; ; ; ;  [1]
  1. Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
Publication Date:
OSTI Identifier:
22398993
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTRON MOBILITY; EPITAXY; GALLIUM NITRIDES; INDIUM NITRIDES; INTERFACES; LAYERS; LIGHT EMITTING DIODES; METALS; N-TYPE CONDUCTORS; SUBSTRATES; TRANSISTORS

Citation Formats

Liu, Chao, Cai, Yuefei, Liu, Zhaojun, Ma, Jun, and Lau, Kei May, E-mail: eekmlau@ust.hk. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors. United States: N. p., 2015. Web. doi:10.1063/1.4921049.
Liu, Chao, Cai, Yuefei, Liu, Zhaojun, Ma, Jun, & Lau, Kei May, E-mail: eekmlau@ust.hk. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors. United States. doi:10.1063/1.4921049.
Liu, Chao, Cai, Yuefei, Liu, Zhaojun, Ma, Jun, and Lau, Kei May, E-mail: eekmlau@ust.hk. Mon . "Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors". United States. doi:10.1063/1.4921049.
@article{osti_22398993,
title = {Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors},
author = {Liu, Chao and Cai, Yuefei and Liu, Zhaojun and Ma, Jun and Lau, Kei May, E-mail: eekmlau@ust.hk},
abstractNote = {We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.},
doi = {10.1063/1.4921049},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}