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Title: Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

Abstract

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

Authors:
; ; ; ; ;  [1]; ;  [2]; ;  [3]
  1. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Nanophotonics Lab, Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)
  3. Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22398990
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EPITAXY; HOLES; INTERFACES; LAYERS; MONOCRYSTALS; OPTOELECTRONIC DEVICES; OXIDATION; QUARTZ; REFLECTION; SILICA; SILICON; SILICON OXIDES; SUBSTRATES; THICKNESS

Citation Formats

Cho, Minkyu, Seo, Jung-Hun, Lee, Jaeseong, Mi, Hongyi, Kim, Munho, Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu, Zhao, Deyin, Zhou, Weidong, Yin, Xin, and Wang, Xudong. Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes. United States: N. p., 2015. Web. doi:10.1063/1.4921055.
Cho, Minkyu, Seo, Jung-Hun, Lee, Jaeseong, Mi, Hongyi, Kim, Munho, Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu, Zhao, Deyin, Zhou, Weidong, Yin, Xin, & Wang, Xudong. Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes. United States. doi:10.1063/1.4921055.
Cho, Minkyu, Seo, Jung-Hun, Lee, Jaeseong, Mi, Hongyi, Kim, Munho, Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu, Zhao, Deyin, Zhou, Weidong, Yin, Xin, and Wang, Xudong. Mon . "Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes". United States. doi:10.1063/1.4921055.
@article{osti_22398990,
title = {Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes},
author = {Cho, Minkyu and Seo, Jung-Hun and Lee, Jaeseong and Mi, Hongyi and Kim, Munho and Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu and Zhao, Deyin and Zhou, Weidong and Yin, Xin and Wang, Xudong},
abstractNote = {In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.},
doi = {10.1063/1.4921055},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 106,
place = {United States},
year = {2015},
month = {5}
}