Nb-doped single crystalline MoS{sub 2} field effect transistor

Das, Saptarshi; Demarteau, Marcellinus; Roelofs, Andreas

doi:10.1063/1.4919565

Title: Nb-doped single crystalline MoS{sub 2} field effect transistor

Journal Article · Mon Apr 27 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919565· OSTI ID:22398978

Das, Saptarshi ^[1]; Demarteau, Marcellinus ^[2]; Roelofs, Andreas ^[1]

Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

We report on the demonstration of a p-type, single crystalline, few layer MoS{sub 2} field effect transistor (FET) using Niobium (Nb) as the dopant. The doping concentration was extracted and determined to be ∼3 × 10{sup 19}/cm{sup 3}. We also report on bilayer Nb-doped MoS{sub 2} FETs with ambipolar conduction. We found that the current ON-OFF ratio of the Nb-doped MoS{sub 2} FETs changes significantly as a function of the flake thickness. We attribute this experimental observation to bulk-type electrostatic effect in ultra-thin MoS{sub 2} crystals. We provide detailed analytical modeling in support of our claims. Finally, we show that in the presence of heavy doping, even ultra-thin 2D-semiconductors cannot be fully depleted and may behave as a 3D material when used in transistor geometry. Our findings provide important insights into the doping constraints of 2D materials, in general.

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OSTI ID:: 22398978

Journal Information:: Applied Physics Letters, Vol. 106, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951

Country of Publication:: United States

Language:: English

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