Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

Journal Article · Mon Apr 06 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917224· OSTI ID:22398839

Lv, Chunyan ^[1]; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang; Yang, Deren ^[1]

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1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

• OSTI ID: 22398839
• Journal Information: Applied Physics Letters, Vol. 106, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CERIUM OXIDES
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRIC UTILITIES
ELECTROLUMINESCENCE
ELECTRONS
ERBIUM
ERBIUM IONS
NEAR INFRARED RADIATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
TRAPS
TUNNEL EFFECT