skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of graphene defect on electronic structures of its interface with organic semiconductor

Abstract

Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

Authors:
; ; ; ; ; ; ;  [1];  [1];  [2];  [3]
  1. Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong)
  2. (China)
  3. Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
Publication Date:
OSTI Identifier:
22398836
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER COMPOUNDS; CRYSTAL DEFECTS; DIFFUSION BARRIERS; DIPOLES; ELECTRONIC STRUCTURE; ELECTRONS; EV RANGE; GRAPHENE; HYDROGEN; INTERFACES; ORGANIC SEMICONDUCTORS; PHOTOELECTRON SPECTROSCOPY; PHTHALOCYANINES; SURFACES

Citation Formats

Yang, Qing-Dan, Wang, Chundong, Mo, Hin-Wai, Lo, Ming-Fai, Yuen, Muk Fung, Ng, Tsz-Wai, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk, Zhang, Wen-Jun, Lee, Chun-Sing, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk, Dou, Wei-Dong, Physics Department, Shaoxing University, Shaoxing 312000, and Tsang, Sai-Wing. Effects of graphene defect on electronic structures of its interface with organic semiconductor. United States: N. p., 2015. Web. doi:10.1063/1.4916736.
Yang, Qing-Dan, Wang, Chundong, Mo, Hin-Wai, Lo, Ming-Fai, Yuen, Muk Fung, Ng, Tsz-Wai, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk, Zhang, Wen-Jun, Lee, Chun-Sing, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk, Dou, Wei-Dong, Physics Department, Shaoxing University, Shaoxing 312000, & Tsang, Sai-Wing. Effects of graphene defect on electronic structures of its interface with organic semiconductor. United States. doi:10.1063/1.4916736.
Yang, Qing-Dan, Wang, Chundong, Mo, Hin-Wai, Lo, Ming-Fai, Yuen, Muk Fung, Ng, Tsz-Wai, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk, Zhang, Wen-Jun, Lee, Chun-Sing, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk, Dou, Wei-Dong, Physics Department, Shaoxing University, Shaoxing 312000, and Tsang, Sai-Wing. Mon . "Effects of graphene defect on electronic structures of its interface with organic semiconductor". United States. doi:10.1063/1.4916736.
@article{osti_22398836,
title = {Effects of graphene defect on electronic structures of its interface with organic semiconductor},
author = {Yang, Qing-Dan and Wang, Chundong and Mo, Hin-Wai and Lo, Ming-Fai and Yuen, Muk Fung and Ng, Tsz-Wai, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk and Zhang, Wen-Jun and Lee, Chun-Sing, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk and Dou, Wei-Dong and Physics Department, Shaoxing University, Shaoxing 312000 and Tsang, Sai-Wing},
abstractNote = {Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.},
doi = {10.1063/1.4916736},
journal = {Applied Physics Letters},
number = 13,
volume = 106,
place = {United States},
year = {Mon Mar 30 00:00:00 EDT 2015},
month = {Mon Mar 30 00:00:00 EDT 2015}
}