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Title: Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

Abstract

In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described. The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.

Authors:
; ; ; ; ; ;  [1];  [2];  [1]; ;  [1];  [2]
  1. Princeton Institute for the Science and Technology of Materials (PRISM), Princeton, New Jersey 08544 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22398795
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANODES; CATHODES; CHANNELING; CHARGE CARRIERS; DEPLETION LAYER; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRONS; HETEROJUNCTIONS; HOLES; INTERFACES; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; RECOMBINATION; SILICON; SILICON SOLAR CELLS; TEMPERATURE RANGE 0273-0400 K; TITANIUM OXIDES

Citation Formats

Nagamatsu, Ken A., E-mail: knagamat@princeton.edu, Man, Gabriel, Jhaveri, Janam, Berg, Alexander H., Kahn, Antoine, Wagner, Sigurd, Sturm, James C., Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, Avasthi, Sushobhan, Sahasrabudhe, Girija, Schwartz, Jeffrey, and Department of Chemistry, Princeton University, Princeton, New Jersey 08544. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell. United States: N. p., 2015. Web. doi:10.1063/1.4916540.
Nagamatsu, Ken A., E-mail: knagamat@princeton.edu, Man, Gabriel, Jhaveri, Janam, Berg, Alexander H., Kahn, Antoine, Wagner, Sigurd, Sturm, James C., Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, Avasthi, Sushobhan, Sahasrabudhe, Girija, Schwartz, Jeffrey, & Department of Chemistry, Princeton University, Princeton, New Jersey 08544. Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell. United States. doi:10.1063/1.4916540.
Nagamatsu, Ken A., E-mail: knagamat@princeton.edu, Man, Gabriel, Jhaveri, Janam, Berg, Alexander H., Kahn, Antoine, Wagner, Sigurd, Sturm, James C., Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, Avasthi, Sushobhan, Sahasrabudhe, Girija, Schwartz, Jeffrey, and Department of Chemistry, Princeton University, Princeton, New Jersey 08544. Mon . "Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell". United States. doi:10.1063/1.4916540.
@article{osti_22398795,
title = {Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell},
author = {Nagamatsu, Ken A., E-mail: knagamat@princeton.edu and Man, Gabriel and Jhaveri, Janam and Berg, Alexander H. and Kahn, Antoine and Wagner, Sigurd and Sturm, James C. and Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 and Avasthi, Sushobhan and Sahasrabudhe, Girija and Schwartz, Jeffrey and Department of Chemistry, Princeton University, Princeton, New Jersey 08544},
abstractNote = {In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described. The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.},
doi = {10.1063/1.4916540},
journal = {Applied Physics Letters},
number = 12,
volume = 106,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}