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Title: Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Abstract

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

Authors:
; ; ;  [1];  [2];  [3];  [4]
  1. School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)
  2. Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
  3. School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)
  4. Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22398788
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; DENSITY OF STATES; DIRECT CURRENT; GALLIUM COMPOUNDS; ILLUMINANCE; INDIUM COMPOUNDS; PERFORMANCE; PEROXIDES; PHASE STABILITY; RELIABILITY; SPUTTERING; STRESSES; THIN FILMS; TRANSISTORS; TRAPPING; ZINC OXIDES

Citation Formats

Jang, Jun Tae, Kim, Dong Myong, Choi, Sung-Jin, Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr, Park, Jozeph, Ahn, Byung Du, and Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation. United States: N. p., 2015. Web. doi:10.1063/1.4916550.
Jang, Jun Tae, Kim, Dong Myong, Choi, Sung-Jin, Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr, Park, Jozeph, Ahn, Byung Du, & Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation. United States. doi:10.1063/1.4916550.
Jang, Jun Tae, Kim, Dong Myong, Choi, Sung-Jin, Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr, Park, Jozeph, Ahn, Byung Du, and Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr. Mon . "Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation". United States. doi:10.1063/1.4916550.
@article{osti_22398788,
title = {Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation},
author = {Jang, Jun Tae and Kim, Dong Myong and Choi, Sung-Jin and Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr and Park, Jozeph and Ahn, Byung Du and Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr},
abstractNote = {The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.},
doi = {10.1063/1.4916550},
journal = {Applied Physics Letters},
number = 12,
volume = 106,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}