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Title: Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

Abstract

Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10{sup 5}), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.

Authors:
;  [1]
  1. Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan 701 Taiwan (China)
Publication Date:
OSTI Identifier:
22398784
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM IONS; APPROXIMATIONS; CHELATES; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; GELATIN; INDIUM COMPOUNDS; MEMORY DEVICES; RANDOMNESS; RETENTION; SOL-GEL PROCESS; SOLUTIONS; TEMPERATURE RANGE 0273-0400 K; TITANIUM OXIDES; VOLATILITY

Citation Formats

Chang, Yu-Chi, and Wang, Yeong-Her, E-mail: yhw@ee.ncku.edu.tw. Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications. United States: N. p., 2015. Web. doi:10.1063/1.4916028.
Chang, Yu-Chi, & Wang, Yeong-Her, E-mail: yhw@ee.ncku.edu.tw. Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications. United States. doi:10.1063/1.4916028.
Chang, Yu-Chi, and Wang, Yeong-Her, E-mail: yhw@ee.ncku.edu.tw. Mon . "Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications". United States. doi:10.1063/1.4916028.
@article{osti_22398784,
title = {Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications},
author = {Chang, Yu-Chi and Wang, Yeong-Her, E-mail: yhw@ee.ncku.edu.tw},
abstractNote = {Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10{sup 5}), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.},
doi = {10.1063/1.4916028},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 106,
place = {United States},
year = {2015},
month = {3}
}