Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

Journal Article · Mon Mar 23 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4916349· OSTI ID:22398774

Paul, Matthias; Kettler, Jan; Zeuner, Katharina; Clausen, Caterina; Jetter, Michael; Michler, Peter ^[1]

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1. Institut für Halbleiteroptik und Funktionelle Grenzflächen, University of Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)

By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<10{sup 7} cm{sup −2}). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g{sup (2)}(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.

• OSTI ID: 22398774
• Journal Information: Applied Physics Letters, Vol. 106, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DENSITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM DOTS
STRAINS
SUBSTRATES
TIME RESOLUTION
VAPOR PHASE EPITAXY