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Title: InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

Abstract

This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In{sub 0.8}Al{sub 0.2}As template layers. The continuous-wave threshold current density is 797 A/cm{sup 2} and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm{sup 2} per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.

Authors:
; ; ; ; ; ;  [1]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22398754
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; BUFFERS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LENGTH; QUANTUM WELLS; SOLID STATE LASERS; STRAINS; SUBSTRATES; THRESHOLD CURRENT; WAVELENGTHS

Citation Formats

Gu, Y., Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn, Ma, Y. J., Zhou, L., Chen, X. Y., Xi, S. P., and Du, B. InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer. United States: N. p., 2015. Web. doi:10.1063/1.4916270.
Gu, Y., Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn, Ma, Y. J., Zhou, L., Chen, X. Y., Xi, S. P., & Du, B. InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer. United States. doi:10.1063/1.4916270.
Gu, Y., Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn, Ma, Y. J., Zhou, L., Chen, X. Y., Xi, S. P., and Du, B. Mon . "InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer". United States. doi:10.1063/1.4916270.
@article{osti_22398754,
title = {InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer},
author = {Gu, Y. and Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn and Ma, Y. J. and Zhou, L. and Chen, X. Y. and Xi, S. P. and Du, B.},
abstractNote = {This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In{sub 0.8}Al{sub 0.2}As template layers. The continuous-wave threshold current density is 797 A/cm{sup 2} and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm{sup 2} per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.},
doi = {10.1063/1.4916270},
journal = {Applied Physics Letters},
number = 12,
volume = 106,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}