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Title: Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO{sub 2}

Abstract

We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.

Authors:
 [1];  [2]; ; ;  [1]; ; ;  [3];  [3];  [4];  [5]
  1. IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany)
  2. (Australia)
  3. Institut für Oberflächen- und Schichtanalytik (IFOS) and Forschungszentrum OPTIMAS, Trippstadter Str. 120, 67663 Kaiserslautern (Germany)
  4. (Germany)
  5. Australian Centre for Advanced Photovoltaics, University of New South Wales, Sydney 2052 (Australia)
Publication Date:
OSTI Identifier:
22395766
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRICAL INSULATION; IONIZATION; LAYERS; NANOSTRUCTURES; PHOSPHORUS; SILICON; SILICON OXIDES; SUPERLATTICES; TRANSIENTS

Citation Formats

Gutsch, Sebastian, Australian Centre for Advanced Photovoltaics, University of New South Wales, Sydney 2052, Laube, Jan, Hiller, Daniel, Zacharias, Margit, Bock, Wolfgang, Wahl, Michael, Kopnarski, Michael, Gnaser, Hubert, Fachbereich Physik und Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern, and Puthen-Veettil, Binesh. Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO{sub 2}. United States: N. p., 2015. Web. doi:10.1063/1.4915307.
Gutsch, Sebastian, Australian Centre for Advanced Photovoltaics, University of New South Wales, Sydney 2052, Laube, Jan, Hiller, Daniel, Zacharias, Margit, Bock, Wolfgang, Wahl, Michael, Kopnarski, Michael, Gnaser, Hubert, Fachbereich Physik und Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern, & Puthen-Veettil, Binesh. Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO{sub 2}. United States. doi:10.1063/1.4915307.
Gutsch, Sebastian, Australian Centre for Advanced Photovoltaics, University of New South Wales, Sydney 2052, Laube, Jan, Hiller, Daniel, Zacharias, Margit, Bock, Wolfgang, Wahl, Michael, Kopnarski, Michael, Gnaser, Hubert, Fachbereich Physik und Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern, and Puthen-Veettil, Binesh. Mon . "Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO{sub 2}". United States. doi:10.1063/1.4915307.
@article{osti_22395766,
title = {Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO{sub 2}},
author = {Gutsch, Sebastian and Australian Centre for Advanced Photovoltaics, University of New South Wales, Sydney 2052 and Laube, Jan and Hiller, Daniel and Zacharias, Margit and Bock, Wolfgang and Wahl, Michael and Kopnarski, Michael and Gnaser, Hubert and Fachbereich Physik und Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern and Puthen-Veettil, Binesh},
abstractNote = {We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.},
doi = {10.1063/1.4915307},
journal = {Applied Physics Letters},
number = 11,
volume = 106,
place = {United States},
year = {Mon Mar 16 00:00:00 EDT 2015},
month = {Mon Mar 16 00:00:00 EDT 2015}
}