Ion polarization behavior in alumina under pulsed gate bias stress

Liu, Yu; Diallo, Abdou Karim

doi:10.1063/1.4916227

Title: Ion polarization behavior in alumina under pulsed gate bias stress

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Abstract

Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K{sup +}), sodium (Na{sup +}), and lithium (Li{sup +}), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔV{sub th}) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔV{sub th} over shorter times was observed in lithium-incorporated aluminamore »« less

Authors:: Liu, Yu; Diallo, Abdou Karim

Publication Date:: Mon Mar 16 00:00:00 EDT 2015

OSTI Identifier:: 22395762

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRONS; FIELD EFFECT TRANSISTORS; LITHIUM; LITHIUM IONS; ORGANIC SEMICONDUCTORS; PERMITTIVITY; POLARIZATION; POTASSIUM; POTASSIUM IONS; SODIUM; SODIUM IONS; TIN OXIDES; TRAPPING

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                    Liu, Yu, Diallo, Abdou Karim, and Katz, Howard E., E-mail: hekatz@jhu.edu. Ion polarization behavior in alumina under pulsed gate bias stress.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4916227.

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                    Liu, Yu, Diallo, Abdou Karim, & Katz, Howard E., E-mail: hekatz@jhu.edu. Ion polarization behavior in alumina under pulsed gate bias stress.  United States.  https://doi.org/10.1063/1.4916227

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                    Liu, Yu, Diallo, Abdou Karim, and Katz, Howard E., E-mail: hekatz@jhu.edu. 2015.  
        "Ion polarization behavior in alumina under pulsed gate bias stress".  United States.  https://doi.org/10.1063/1.4916227.

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@article{osti_22395762,

  title        = {Ion polarization behavior in alumina under pulsed gate bias stress},

  author       = {Liu, Yu and Diallo, Abdou Karim and Katz, Howard E., E-mail: hekatz@jhu.edu},

  abstractNote = {Alkali metal ion incorporation in alumina significantly increases alumina capacitance by ion polarization. With high capacitance, ion-incorporated aluminas become promising high dielectric constant (high-k) gate dielectric materials in field-effect transistors (FETs) to enable reduced operating voltage, using oxide or organic semiconductors. Alumina capacitance can be manipulated by incorporation of alkali metal ions, including potassium (K{sup +}), sodium (Na{sup +}), and lithium (Li{sup +}), having different bond strengths with oxygen. To investigate the electrical stability of zinc tin oxide-based transistors using ion incorporated alumina as gate dielectrics, pulsed biases at different duty cycles (20%, 10%, and 2% representing 5 ms, 10 ms, and 50 ms periods, respectively) were applied to the gate electrode, sweeping the gate voltage over series of these cycles. We observed a particular bias stress-induced decrease of saturation field-effect mobility accompanied by threshold voltage shifts (ΔV{sub th}) in potassium and sodium-incorporated alumina (abbreviated as PA and SA)-based FETs at high duty cycle that persisted over multiple gate voltage sweeps, suggesting a possible creation of new defects in the semiconductor. This conclusion is also supported by the greater change in the mobility-capacitance (μC) product than in capacitance itself. Moreover, a more pronounced ΔV{sub th} over shorter times was observed in lithium-incorporated alumina (abbreviated as LA)-based transistors, suggesting trapping of electrons in existing interfacial states. ΔV{sub th} from multiple gate voltage sweeps over time were fit to stretched exponential forms. All three dielectrics show good stability using 50-ms intervals (20-Hz frequencies), corresponding to 2% duty cycles.},

  doi          = {10.1063/1.4916227},

  url          = {https://www.osti.gov/biblio/22395762},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 11,

  volume       = 106,

  place        = {United States},

  year         = {Mon Mar 16 00:00:00 EDT 2015},

  month        = {Mon Mar 16 00:00:00 EDT 2015}

}

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