Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO{sub 2} and β-Ga{sub 2}O{sub 3} (2{sup ¯}01)

Journal Article · Mon Mar 09 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4915262· OSTI ID:22395710

Jia, Ye; Zeng, Ke; Singisetti, Uttam ^[1]; Wallace, Joshua S.; Gardella, Joseph A ^[2]

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1. Electrical Engineering Department, University at Buffalo, Buffalo, New York 14260 (United States)
2. Chemistry Department, University at Buffalo, Buffalo, New York 14260 (United States)

The energy band alignment between atomic layer deposited (ALD) SiO{sub 2} and β-Ga{sub 2}O{sub 3} (2{sup ¯}01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO{sub 2} and Ga{sub 2}O{sub 3} is found to be 0.43 eV. The bandgap of ALD SiO{sub 2} was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO{sub 2} and Ga{sub 2}O{sub 3}. The large conduction band offset makes SiO{sub 2} an attractive gate dielectric for power devices.

• OSTI ID: 22395710
• Journal Information: Applied Physics Letters, Vol. 106, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITORS
DEPOSITION
DIELECTRIC MATERIALS
ELECTRONIC STRUCTURE
ENERGY GAP
EV RANGE
GALLIUM OXIDES
LAYERS
METALS
SEMICONDUCTOR MATERIALS
SILICA
SILICON OXIDES
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY