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Title: Determination of the geometric corrugation of graphene on SiC(0001) by grazing incidence fast atom diffraction

Abstract

We present a grazing incidence fast atom diffraction (GIFAD) study of monolayer graphene on 6H-SiC(0001). This system shows a Moiré-like 13 × 13 superlattice above the reconstructed carbon buffer layer. The averaging property of GIFAD results in electronic and geometric corrugations that are well decoupled; the graphene honeycomb corrugation is only observed with the incident beam parallel to the zigzag direction while the geometric corrugation arising from the superlattice is revealed along the armchair direction. Full-quantum calculations of the diffraction patterns show the very high GIFAD sensitivity to the amplitude of the surface corrugation. The best agreement between the calculated and measured diffraction intensities yields a corrugation height of 0.27 ± 0.03 Å.

Authors:
; ; ; ; ; ; ;  [1];  [1];  [2]
  1. Institut des Sciences Moléculaires d'Orsay, ISMO, UMR 8214, CNRS-Univ Paris-Sud, Bât. 351, F-91405 Orsay (France)
  2. (France)
Publication Date:
OSTI Identifier:
22395699
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CRYSTAL STRUCTURE; DIFFRACTION; GRAPHENE; LAYERS; SENSITIVITY; SILICON CARBIDES; SUPERLATTICES; SURFACES

Citation Formats

Zugarramurdi, A., Debiossac, M., Lunca-Popa, P., Mayne, A. J., Borisov, A. G., Mu, Z., Roncin, P., Khemliche, H., Momeni, A., and Université de Cergy-Pontoise, 33 Boulevard du Port, F-95031 Cergy. Determination of the geometric corrugation of graphene on SiC(0001) by grazing incidence fast atom diffraction. United States: N. p., 2015. Web. doi:10.1063/1.4914178.
Zugarramurdi, A., Debiossac, M., Lunca-Popa, P., Mayne, A. J., Borisov, A. G., Mu, Z., Roncin, P., Khemliche, H., Momeni, A., & Université de Cergy-Pontoise, 33 Boulevard du Port, F-95031 Cergy. Determination of the geometric corrugation of graphene on SiC(0001) by grazing incidence fast atom diffraction. United States. doi:10.1063/1.4914178.
Zugarramurdi, A., Debiossac, M., Lunca-Popa, P., Mayne, A. J., Borisov, A. G., Mu, Z., Roncin, P., Khemliche, H., Momeni, A., and Université de Cergy-Pontoise, 33 Boulevard du Port, F-95031 Cergy. Mon . "Determination of the geometric corrugation of graphene on SiC(0001) by grazing incidence fast atom diffraction". United States. doi:10.1063/1.4914178.
@article{osti_22395699,
title = {Determination of the geometric corrugation of graphene on SiC(0001) by grazing incidence fast atom diffraction},
author = {Zugarramurdi, A. and Debiossac, M. and Lunca-Popa, P. and Mayne, A. J. and Borisov, A. G. and Mu, Z. and Roncin, P. and Khemliche, H. and Momeni, A. and Université de Cergy-Pontoise, 33 Boulevard du Port, F-95031 Cergy},
abstractNote = {We present a grazing incidence fast atom diffraction (GIFAD) study of monolayer graphene on 6H-SiC(0001). This system shows a Moiré-like 13 × 13 superlattice above the reconstructed carbon buffer layer. The averaging property of GIFAD results in electronic and geometric corrugations that are well decoupled; the graphene honeycomb corrugation is only observed with the incident beam parallel to the zigzag direction while the geometric corrugation arising from the superlattice is revealed along the armchair direction. Full-quantum calculations of the diffraction patterns show the very high GIFAD sensitivity to the amplitude of the surface corrugation. The best agreement between the calculated and measured diffraction intensities yields a corrugation height of 0.27 ± 0.03 Å.},
doi = {10.1063/1.4914178},
journal = {Applied Physics Letters},
number = 10,
volume = 106,
place = {United States},
year = {Mon Mar 09 00:00:00 EDT 2015},
month = {Mon Mar 09 00:00:00 EDT 2015}
}
  • A Grazing Incidence Fast Atom Diffraction (GIFAD) system has been mounted on a commercial molecular beam epitaxy chamber and used to monitor GaAs growth in real-time. In contrast to the conventionally used Reflection High Energy Electron Diffraction, all the GIFAD diffraction orders oscillate in phase, with the change in intensity related to diffuse scattering at step edges. We show that the scattered intensity integrated over the Laue circle is a robust method to monitor the periodic change in surface roughness during layer-by-layer growth, with oscillation phase and amplitude independent of incidence angle and crystal orientation. When there is a changemore » in surface reconstruction at the start of growth, GIFAD intensity oscillations show that there is a corresponding delay in the onset of layer-by-layer growth. In addition, changes in the relative intensity of different diffraction orders have been observed during growth showing that GIFAD has the potential to provide insight into the preferential adatom attachment sites on the surface reconstruction during growth.« less
  • No abstract prepared.
  • No abstract prepared.
  • Detailed comparison has been drawn between synchrotron white beam X-ray topographic images of micropipes in 4H-SiC, recorded using pyramidal plane reflections in grazing-incidence geometry, and images simulated using the ray-tracing method. The simulations were carried out with and without the influence of surface relaxation effects. The images simulated in the absence of surface relaxation effects appear as white elliptical shaped features, canted to one side or other of the g-vector (depending on the dislocation sense), surrounded by a dark contrast perimeter which thickens at both ends of the major axis and which exhibits two fold symmetry axes parallel to themore » major and minor axes. On the other hand, on the images simulated taking into account the effects of surface relaxation, the features are again canted to one side or other of the g-vector (depending on the dislocation sense) but do not exhibit the same symmetry in that one of the sides of the oval shape is flattened (along the major axis) and the distribution of intensity around the perimeter no longer possesses the two fold symmetry axes parallel to the major and minor axes. While the details of the distribution of the dark perimeter contrast observed on the recorded images are not so easy to correlate with the simulated distributions, the sense of cant of the roughly elliptical white features on the observed images can be easily correlated with the simulations. Since the sense of cant has the same behavior as a function of dislocation sense for simulations carried out with and without surface relaxation, this provides a high level of confidence that the sense of cant of these features can be readily used to determine the senses of the micropipes.« less
  • We present a structural analysis of the multilayer graphene/4HSiC(0001) system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated (0001) surface have a graphene-substrate bond length that is very short (1.62 A). The measured distance rules out a weak van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab initio calculations. The measurements also indicate that multilayer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conductionmore » measurements on this system [C. Berger et al., Science 312, 1191 (2006)].« less