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Title: Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands

Abstract

Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse scattering close to basis forbidden Bragg reflections to infer the lateral location, the symmetry, and the thermal stability of ordered domains in GeSi dome-shaped islands on Si(001) after growth and during annealing. We observe that atomic ordering does not disappear after annealing, demonstrating that it is a resilient metastable phenomenon.

Authors:
 [1];  [2];  [3];  [4];  [5];  [2];  [6];  [4];  [7];  [8]
  1. Faculté des Sciences de St Jérôme, IM2NP-CNRS, Aix-Marseille University, 13397 Marseille (France)
  2. (France)
  3. Departamento de Física, Universidade Federal de Minas Gerais, CEP 31270-901 Belo Horizonte, MG (Brazil)
  4. ID01/ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex (France)
  5. INAC-SP2M, University Grenoble Alpes, F-38000 Grenoble (France)
  6. Department of Physics, Fudan University, Shanghai 200433 (China)
  7. (Germany)
  8. CEA, INAC-SP2M, F-38000 Grenoble (France)
Publication Date:
OSTI Identifier:
22395649
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BRAGG REFLECTION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFUSE SCATTERING; DOMAIN STRUCTURE; EPITAXY; GERMANIUM SILICIDES; INDIUM FLUORIDES; NANOPARTICLES; PHASE STABILITY; SILICON; SYMMETRY; THIN FILMS; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Richard, M.-I., E-mail: marie-ingrid.richard@im2np.fr, ID01/ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex, Malachias, A., Schülli, T. U., Favre-Nicolin, V., CEA, INAC-SP2M, F-38000 Grenoble, Zhong, Z., Metzger, T. H., Max Planck Institute of Colloids and Interfaces, D-14424 Potsdam, and Renaud, G. Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands. United States: N. p., 2015. Web. doi:10.1063/1.4905844.
Richard, M.-I., E-mail: marie-ingrid.richard@im2np.fr, ID01/ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex, Malachias, A., Schülli, T. U., Favre-Nicolin, V., CEA, INAC-SP2M, F-38000 Grenoble, Zhong, Z., Metzger, T. H., Max Planck Institute of Colloids and Interfaces, D-14424 Potsdam, & Renaud, G. Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands. United States. doi:10.1063/1.4905844.
Richard, M.-I., E-mail: marie-ingrid.richard@im2np.fr, ID01/ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex, Malachias, A., Schülli, T. U., Favre-Nicolin, V., CEA, INAC-SP2M, F-38000 Grenoble, Zhong, Z., Metzger, T. H., Max Planck Institute of Colloids and Interfaces, D-14424 Potsdam, and Renaud, G. Mon . "Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands". United States. doi:10.1063/1.4905844.
@article{osti_22395649,
title = {Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands},
author = {Richard, M.-I., E-mail: marie-ingrid.richard@im2np.fr and ID01/ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex and Malachias, A. and Schülli, T. U. and Favre-Nicolin, V. and CEA, INAC-SP2M, F-38000 Grenoble and Zhong, Z. and Metzger, T. H. and Max Planck Institute of Colloids and Interfaces, D-14424 Potsdam and Renaud, G.},
abstractNote = {Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse scattering close to basis forbidden Bragg reflections to infer the lateral location, the symmetry, and the thermal stability of ordered domains in GeSi dome-shaped islands on Si(001) after growth and during annealing. We observe that atomic ordering does not disappear after annealing, demonstrating that it is a resilient metastable phenomenon.},
doi = {10.1063/1.4905844},
journal = {Applied Physics Letters},
number = 1,
volume = 106,
place = {United States},
year = {Mon Jan 05 00:00:00 EST 2015},
month = {Mon Jan 05 00:00:00 EST 2015}
}
  • We report on thermal investigations performed in a time resolved experimental scheme. The time domain thermoreflectance (TDTR) is applied in an unusual geometry where the pump and probe beams are not superimposed but focused and shifted. In this way, the determination of the in-plane thermal diffusivity is achieved from temperature snapshots at different time delays. In the first part, taking into account the specific generation process and the detection inherent to the time domain thermoreflectance approach, an analytical solution for the temperature field is obtained for bulk samples, and compared to experimental data. A comparison with the frequency domain thermoreflectancemore » microscopy is also outlined. In Part II section, the lateral heat diffusion in a layered structure is investigated. The comparison of the heat diffusion spreading in case of a highly conductive layer deposited on an insulator substrate and the reverse situation are carefully studied. Finally, we show how the time dependence is efficient to probe and identify material thermal properties or thermal interfacial resistance.« less
  • No abstract prepared.
  • The temperature dependence of ultrathin ZrO{sub 2} films on clean (2x1)-reconstructed Si(100) was studied by means of x-ray photoelectron spectroscopy and photoelectron diffraction (XPD). ZrO{sub 2} films with a thickness of approximately 11 A were grown by electron-beam evaporation. At temperatures of 650 deg. C and above it was found that the zirconia (ZrO{sub 2}) films were transformed into ZrSi{sub 2}. The temperature region of structural transformation could be narrowed to the range from 650 to 725 deg. C. During the formation of ZrSi{sub 2} all oxygen was removed from the sample surface. After annealing at 725 deg. C neithermore » zirconia nor silicon oxide could be verified on the sample. Scanning electron microscopy (SEM) measurements showed the ZrSi{sub 2} being arranged in islands on the surface after annealing. From the combined spectroscopy, SEM, and XPD analysis a model for the internal structure of ZrSi{sub 2} is proposed.« less
  • Previous studies have shown that heat transport by horizontal conduction in thermal displacement processes in porous media has a stabilizing effect on condensation fronts. This work expands the stability analysis by also including the description of heat transfer lateral heat losses by conjugate (vertical) conduction. A marginal stability condition is derived in terms of a parameter representing the relative magnitude of heat transfer by conjugate conduction. It is shown that lateral heat losses suggest a significant stabilizing effect on the front. This effect should be important in thermal oil recovery processes such as steam injection and in-situ combustion.
  • Two Pt-Sn surface alloys were oxidized at 300 K by ozone (O{sub 3}) exposure in UHV. Both alloys were less reactive than Pt(111), and the p(2 x 2) alloy ({Theta}{sub Sn} = 0.25) was more reactive than the ({radical} 3x {radical} 3) R30{degree} alloy ({Theta}{sub Sn} = 0.33). The relative O{sub 3} dissociative sticking coefficients on these surfaces at 300 K were 1.0:0.79:0.33, respectively. Ozone dissociation was inhibited more easily on the alloys than on Pt(111), and large O{sub 3} doses on the p(2 x 2) and ({radical} 3x {radical} 3)R30{degree} surface alloys produced oxygen coverages of 1.2 and 0.87more » monolayers, respectively, compared to 2.4 monolayers on Pt(111). Both chemisorbed and oxidic oxygen states were characterized by using Auger electron spectroscopy (AES), temperature-programmed desorption (TPD), and low-energy electron diffraction (LEED). At 300 K, chemisorbed oxygen adatoms are formed at low exposures, but oxidation of Sn occurs at large oxygen coverages, as evidenced by a 1.6 eV downshift of the Sn(MNN) AES peak. Heating during TPD causes SnO{sub x} formation even at low coverages, and this decomposes to liberate O{sub 2} in desorption peaks at 1,015 and 1,078 K on the p(2 x 2) and ({radical} 3x {radical} 3)R30{degree} surfaces, respectively. After oxidation of Sn, TPD indicates desorption of oxygen from chemisorbed adatoms bound at Pt sites and eventually formation of platinum oxide particles. SnO{sub x} particles formed in intimate contact with Pt by oxidation of these Pt-Sn alloys and high-temperature heating are easier (100 K) to reduce by heating in a vacuum than a corresponding thick SnO{sub x} film. The authors also find additional stability (130 K) imparted to PtO{sub x} particles by the presence of oxidized Sn following oxidation of these alloys. Heating these oxidized alloys to 1,000 K produces a (4 x 1) LEED pattern that they have assigned to the formation of large domains of an SnO{sub 2} overlayer on both of the surface alloys.« less