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Title: Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices

Abstract

A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10{sup −7} A/cm{sup 2} under 100 mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 × 10{sup 12 }cm·√(Hz)/W at 77 K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10{sup −4} A/cm{sup 2} under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 10{sup 11 }cm·√(Hz)/W.

Authors:
; ; ; ;  [1]
  1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22395634
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; ELECTRIC POTENTIAL; GALLIUM ANTIMONIDES; ILLUMINANCE; INDIUM ARSENIDES; PERFORMANCE; PHOTODETECTORS; QUANTUM EFFICIENCY; REFLECTION; SUBSTRATES; SUPERLATTICES; WAVELENGTHS

Citation Formats

Haddadi, A., Chevallier, R., Chen, G., Hoang, A. M., and Razeghi, M., E-mail: razeghi@eecs.northwestern.edu. Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices. United States: N. p., 2015. Web. doi:10.1063/1.4905565.
Haddadi, A., Chevallier, R., Chen, G., Hoang, A. M., & Razeghi, M., E-mail: razeghi@eecs.northwestern.edu. Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices. United States. doi:10.1063/1.4905565.
Haddadi, A., Chevallier, R., Chen, G., Hoang, A. M., and Razeghi, M., E-mail: razeghi@eecs.northwestern.edu. Mon . "Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices". United States. doi:10.1063/1.4905565.
@article{osti_22395634,
title = {Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices},
author = {Haddadi, A. and Chevallier, R. and Chen, G. and Hoang, A. M. and Razeghi, M., E-mail: razeghi@eecs.northwestern.edu},
abstractNote = {A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10{sup −7} A/cm{sup 2} under 100 mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 × 10{sup 12 }cm·√(Hz)/W at 77 K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10{sup −4} A/cm{sup 2} under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 10{sup 11 }cm·√(Hz)/W.},
doi = {10.1063/1.4905565},
journal = {Applied Physics Letters},
number = 1,
volume = 106,
place = {United States},
year = {Mon Jan 05 00:00:00 EST 2015},
month = {Mon Jan 05 00:00:00 EST 2015}
}