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Title: Titanium-dioxide nanotube p-n homojunction diode

Abstract

Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

Authors:
; ;  [1];  [1];  [2];  [2]
  1. Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22395622
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DOPED MATERIALS; ELECTRIC CONTACTS; NANOTUBES; NIOBIUM; NITROGEN; OPTOELECTRONIC DEVICES; PHOTOCATALYSIS; PHOTODIODES; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SURFACE AREA; THIN FILMS; TITANIUM OXIDES; ULTRAVIOLET RADIATION; VISIBLE RADIATION

Citation Formats

Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu, Ding, Yuchen, Singh, Vivek, Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu, Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303, and Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309. Titanium-dioxide nanotube p-n homojunction diode. United States: N. p., 2014. Web. doi:10.1063/1.4905218.
Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu, Ding, Yuchen, Singh, Vivek, Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu, Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303, & Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309. Titanium-dioxide nanotube p-n homojunction diode. United States. doi:10.1063/1.4905218.
Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu, Ding, Yuchen, Singh, Vivek, Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu, Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303, and Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309. Mon . "Titanium-dioxide nanotube p-n homojunction diode". United States. doi:10.1063/1.4905218.
@article{osti_22395622,
title = {Titanium-dioxide nanotube p-n homojunction diode},
author = {Alivov, Yahya, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu and Ding, Yuchen and Singh, Vivek and Nagpal, Prashant, E-mail: y.alivov@colorado.edu, E-mail: pnagpal@colorado.edu and Materials Science and Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 and Renewable and Sustainable Energy Institute, University of Colorado Boulder, 2445 Kittredge Loop, Boulder, Colorado 80309},
abstractNote = {Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.},
doi = {10.1063/1.4905218},
journal = {Applied Physics Letters},
number = 26,
volume = 105,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}