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Title: Gating of high-mobility InAs metamorphic heterostructures

Abstract

We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

Authors:
 [1];  [2];  [3];  [1];  [4];  [4]
  1. California NanoSystems Institute, University of California, Santa Barbara, California 93106 (United States)
  2. Department of Electrical Engineering, University of California, Santa Barbara, California 93106 (United States)
  3. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22395612
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CHARGE DENSITY; ELECTRIC CONDUCTIVITY; FABRICATION; FERMI LEVEL; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; PERFORMANCE; QUANTUM WELLS; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Shabani, J., McFadden, A. P., Shojaei, B., Palmstrøm, C. J., Department of Electrical Engineering, University of California, Santa Barbara, California 93106, and Materials Department, University of California, Santa Barbara, California 93106. Gating of high-mobility InAs metamorphic heterostructures. United States: N. p., 2014. Web. doi:10.1063/1.4905370.
Shabani, J., McFadden, A. P., Shojaei, B., Palmstrøm, C. J., Department of Electrical Engineering, University of California, Santa Barbara, California 93106, & Materials Department, University of California, Santa Barbara, California 93106. Gating of high-mobility InAs metamorphic heterostructures. United States. doi:10.1063/1.4905370.
Shabani, J., McFadden, A. P., Shojaei, B., Palmstrøm, C. J., Department of Electrical Engineering, University of California, Santa Barbara, California 93106, and Materials Department, University of California, Santa Barbara, California 93106. Mon . "Gating of high-mobility InAs metamorphic heterostructures". United States. doi:10.1063/1.4905370.
@article{osti_22395612,
title = {Gating of high-mobility InAs metamorphic heterostructures},
author = {Shabani, J. and McFadden, A. P. and Shojaei, B. and Palmstrøm, C. J. and Department of Electrical Engineering, University of California, Santa Barbara, California 93106 and Materials Department, University of California, Santa Barbara, California 93106},
abstractNote = {We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.},
doi = {10.1063/1.4905370},
journal = {Applied Physics Letters},
number = 26,
volume = 105,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}