Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO{sub 4}
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
- Corning Incorporated, Corning, New York 14831 (United States)
Crystallinity and texturing of RF sputtered c-axis aligned crystal InGaZnO{sub 4} (CAAC IGZO) thin films were quantified using X-ray diffraction techniques. Above 190 °C, nanocrystalline films with an X-ray peak at 2θ = 30° (009 planes) developed with increasing c-axis normal texturing up to 310 °C. Under optimal conditions (310 °C, 10% O{sub 2}), films exhibited a c-axis texture full-width half-maximum of 20°. Cross-sectional high-resolution transmission electron microscopy confirmed these results, showing alignment variation of ±9° over a 15 × 15 nm field of view and indicating formation of much larger aligned domains than previously reported. At higher deposition temperatures, c-axis alignment was gradually lost as polycrystalline films developed.
- OSTI ID:
- 22395610
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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