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Title: Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

Abstract

Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells is observed at room temperature. 10 period Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition (MOCVD), and the high-quality structural and optical properties are revealed by x-ray diffraction and photoluminescence studies. Through this we have demonstrated that MOCVD grown non-polar m-plane AlGaN/GaN quantum wells are a promising material for mid-infrared intersubband devices.

Authors:
 [1];  [2];  [2];  [1];  [1];  [2]
  1. Institute for Nano Quantum Information Electronics, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22395603
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION

Citation Formats

Kotani, Teruhisa, E-mail: kotani.teruhisa@sharp.co.jp, Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Life and Environment Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Arita, Munetaka, Arakawa, Yasuhiko, and Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505. Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells. United States: N. p., 2014. Web. doi:10.1063/1.4905212.
Kotani, Teruhisa, E-mail: kotani.teruhisa@sharp.co.jp, Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Life and Environment Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Arita, Munetaka, Arakawa, Yasuhiko, & Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505. Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells. United States. doi:10.1063/1.4905212.
Kotani, Teruhisa, E-mail: kotani.teruhisa@sharp.co.jp, Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Life and Environment Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Arita, Munetaka, Arakawa, Yasuhiko, and Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505. Mon . "Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells". United States. doi:10.1063/1.4905212.
@article{osti_22395603,
title = {Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells},
author = {Kotani, Teruhisa, E-mail: kotani.teruhisa@sharp.co.jp and Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 and Life and Environment Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567 and Arita, Munetaka and Arakawa, Yasuhiko and Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505},
abstractNote = {Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells is observed at room temperature. 10 period Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition (MOCVD), and the high-quality structural and optical properties are revealed by x-ray diffraction and photoluminescence studies. Through this we have demonstrated that MOCVD grown non-polar m-plane AlGaN/GaN quantum wells are a promising material for mid-infrared intersubband devices.},
doi = {10.1063/1.4905212},
journal = {Applied Physics Letters},
number = 26,
volume = 105,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}