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Title: Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Abstract

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

Authors:
; ;  [1]; ;  [2]; ; ; ;  [3];  [3]
  1. Departments of Physics and Materials Science and Engineering, Boise State University, Boise, Idaho 83725 (United States)
  2. California NanoSystems Institute and Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
  3. Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)
Publication Date:
OSTI Identifier:
22395579
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DISLOCATIONS; FINE STRUCTURE; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LUMINESCENCE; MORPHOLOGY; PHOTONS; POLARIZATION; QUANTUM DOTS; QUANTUM ENTANGLEMENT; STRAINS; SUBSTRATES; SURFACES; SYMMETRY; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Yerino, Christopher D., Jung, Daehwan, Lee, Minjoo Larry, E-mail: minjoo.lee@yale.edu, Simmonds, Paul J., Liang, Baolai, Huffaker, Diana L., Schneider, Christian, Unsleber, Sebastian, Vo, Minh, Kamp, Martin, Höfling, Sven, and SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting. United States: N. p., 2014. Web. doi:10.1063/1.4904944.
Yerino, Christopher D., Jung, Daehwan, Lee, Minjoo Larry, E-mail: minjoo.lee@yale.edu, Simmonds, Paul J., Liang, Baolai, Huffaker, Diana L., Schneider, Christian, Unsleber, Sebastian, Vo, Minh, Kamp, Martin, Höfling, Sven, & SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting. United States. https://doi.org/10.1063/1.4904944
Yerino, Christopher D., Jung, Daehwan, Lee, Minjoo Larry, E-mail: minjoo.lee@yale.edu, Simmonds, Paul J., Liang, Baolai, Huffaker, Diana L., Schneider, Christian, Unsleber, Sebastian, Vo, Minh, Kamp, Martin, Höfling, Sven, and SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS. Mon . "Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting". United States. https://doi.org/10.1063/1.4904944.
@article{osti_22395579,
title = {Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting},
author = {Yerino, Christopher D. and Jung, Daehwan and Lee, Minjoo Larry, E-mail: minjoo.lee@yale.edu and Simmonds, Paul J. and Liang, Baolai and Huffaker, Diana L. and Schneider, Christian and Unsleber, Sebastian and Vo, Minh and Kamp, Martin and Höfling, Sven and SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS},
abstractNote = {Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.},
doi = {10.1063/1.4904944},
url = {https://www.osti.gov/biblio/22395579}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 105,
place = {United States},
year = {2014},
month = {12}
}