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Title: Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films

Abstract

We describe a novel approach for calibration of the thermoreflectance coefficient, ideally suited for measurements in a vacuum thermostat, and present the high temperature thermoreflectance coefficients for several metals commonly encountered in electronic devices: gold, platinum, and aluminum. The effect of passivation on these metals is also examined, and we demonstrate the signal to noise ratio of a thermoreflectance measurement can be improved with informed selection of the dielectric layer thickness. Furthermore, the thermo-optic coefficients of the metals are extracted over a wide temperature range. The results presented here can be utilized in the optimization of experimental configurations for high temperature thermoreflectance imaging.

Authors:
;  [1]
  1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
OSTI Identifier:
22392382
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 86; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALUMINIUM; CALIBRATION; DIELECTRIC MATERIALS; ELECTRONIC EQUIPMENT; GOLD; OPTIMIZATION; PASSIVATION; PLATINUM; SIGNAL-TO-NOISE RATIO; TEMPERATURE DEPENDENCE; THERMOSTATS; THICKNESS; THIN FILMS

Citation Formats

Favaloro, T., Shakouri, A., E-mail: shakouri@purdue.edu, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, and Bahk, J. -H. Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films. United States: N. p., 2015. Web. doi:10.1063/1.4907354.
Favaloro, T., Shakouri, A., E-mail: shakouri@purdue.edu, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, & Bahk, J. -H. Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films. United States. https://doi.org/10.1063/1.4907354
Favaloro, T., Shakouri, A., E-mail: shakouri@purdue.edu, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, and Bahk, J. -H. 2015. "Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films". United States. https://doi.org/10.1063/1.4907354.
@article{osti_22392382,
title = {Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films},
author = {Favaloro, T. and Shakouri, A., E-mail: shakouri@purdue.edu and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 and Bahk, J. -H.},
abstractNote = {We describe a novel approach for calibration of the thermoreflectance coefficient, ideally suited for measurements in a vacuum thermostat, and present the high temperature thermoreflectance coefficients for several metals commonly encountered in electronic devices: gold, platinum, and aluminum. The effect of passivation on these metals is also examined, and we demonstrate the signal to noise ratio of a thermoreflectance measurement can be improved with informed selection of the dielectric layer thickness. Furthermore, the thermo-optic coefficients of the metals are extracted over a wide temperature range. The results presented here can be utilized in the optimization of experimental configurations for high temperature thermoreflectance imaging.},
doi = {10.1063/1.4907354},
url = {https://www.osti.gov/biblio/22392382}, journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 2,
volume = 86,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}

Works referencing / citing this record:

Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials
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