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Title: Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

Abstract

Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for themore » tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.« less

Authors:
 [1]
  1. Materials Science and Engineering North Carolina State University Raleigh, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
22392185
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 33; Journal Issue: 3; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ARGON; CHROMIUM NITRIDES; DEPOSITS; FILMS; GRAIN SIZE; INTERFACES; MAGNETRONS; NITROGEN; PLASMA; SPUTTERING; SUBSTRATES; THERMAL CONDUCTIVITY; TITANIUM NITRIDES; TUNGSTEN; X-RAY DIFFRACTION

Citation Formats

Jagannadham, Kasichainula, E-mail: jag-kasichainula@ncsu.edu. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering. United States: N. p., 2015. Web. doi:10.1116/1.4919067.
Jagannadham, Kasichainula, E-mail: jag-kasichainula@ncsu.edu. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering. United States. doi:10.1116/1.4919067.
Jagannadham, Kasichainula, E-mail: jag-kasichainula@ncsu.edu. Fri . "Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering". United States. doi:10.1116/1.4919067.
@article{osti_22392185,
title = {Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering},
author = {Jagannadham, Kasichainula, E-mail: jag-kasichainula@ncsu.edu},
abstractNote = {Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.},
doi = {10.1116/1.4919067},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 3,
volume = 33,
place = {United States},
year = {2015},
month = {5}
}