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Title: In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

Abstract

The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.

Authors:
; ;  [1];  [2]
  1. Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095 (United States)
  2. Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden)
Publication Date:
OSTI Identifier:
22392171
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 33; Journal Issue: 3; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON CHLORIDES; CRYSTALS; ETCHING; FILMS; HYDROFLUORIC ACID; INDIUM CHLORIDES; LANTHANUM OXIDES; MASS SPECTROSCOPY; MICROBALANCES; PLASMA; QUARTZ; SCANNING ELECTRON MICROSCOPY; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Marchack, Nathan, Kim, Taeseung, Chang, Jane P., E-mail: jpchang@seas.ucla.edu, and Blom, Hans-Olof. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance. United States: N. p., 2015. Web. doi:10.1116/1.4914132.
Marchack, Nathan, Kim, Taeseung, Chang, Jane P., E-mail: jpchang@seas.ucla.edu, & Blom, Hans-Olof. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance. United States. doi:10.1116/1.4914132.
Marchack, Nathan, Kim, Taeseung, Chang, Jane P., E-mail: jpchang@seas.ucla.edu, and Blom, Hans-Olof. Fri . "In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance". United States. doi:10.1116/1.4914132.
@article{osti_22392171,
title = {In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance},
author = {Marchack, Nathan and Kim, Taeseung and Chang, Jane P., E-mail: jpchang@seas.ucla.edu and Blom, Hans-Olof},
abstractNote = {The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.},
doi = {10.1116/1.4914132},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 3,
volume = 33,
place = {United States},
year = {2015},
month = {5}
}